參數(shù)資料
型號: VNQ810P
英文描述: QUAD CHANNEL HIGH SIDE DRIVER
中文描述: 四通道高邊驅(qū)動器
文件頁數(shù): 10/20頁
文件大?。?/td> 318K
代理商: VNQ810P
10/20
VNQ810P
Solution 2: A diode (D
GND
) in the ground line.
A resistor (R
=1k
)
should be inserted in parallel to
D
GND
if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (
j
600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
LOAD DUMP PROTECTION
D
is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds V
CC
max DC rating. The
same applies if the device will be subject to transients on
the V
line that are greater than the ones shown in the
ISO T/R 7637/1 table.
μ
C I/Os PROTECTION:
If a ground protection network is used and negative
transient are present on the V
line, the control pins will
be pulled negative. ST suggests to insert a resistor (R
prot
)
in line to prevent the
μ
C I/Os pins to latch-up.
The value of these resistors is a compromise between
the leakage current of
μ
C and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of
μ
C I/Os.
-V
CCpeak
/I
latchup
R
prot
(V
OH
μ
C
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= - 100V and I
latchup
20mA; V
OH
μ
C
4.5V
5k
R
prot
65k
.
Recommended R
prot
value is 10k
.
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