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參數(shù)資料
| 型號： | VNQ830M13TR |
| 廠商： | 意法半導體 |
| 英文描述： | CLIP, RM10; Depth, external:4.8mm; Width, external:17mm RoHS Compliant: Yes |
| 中文描述： | 四通道高邊驅(qū)動器 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大小： | 315K |
| 代理商： | VNQ830M13TR |
January 2003
1/20
ABSOLUTE MAXIMUM RATING
(**) See application schematic at page 9
Symbol
V
CC
- V
CC
- I
GND
I
OUT
- I
OUT
I
IN
I
STAT
Parameter
Value
41
- 0.3
- 200
Unit
V
V
mA
A
A
mA
mA
DC Supply Voltage
Reverse DC Supply Voltage
DC Reverse Ground Pin Current
DC Output Current
Reverse DC Output Current
DC Input Current
DC Status Current
Electrostatic Discharge (Human Body Model: R=1.5K
;
C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
Power Dissipation T
pins
=25°C
Maximum Switching Energy
(L=1mH; R
L
=0
; V
bat
=13.5V; T
jstart
=150oC; I
L
=10.5A)
Junction Operating Temperature
Storage Temperature
Internally Limited
- 6
+/- 10
+/- 10
V
ESD
4000
4000
5000
5000
6.25
V
V
V
V
W
P
tot
E
MAX
77
mJ
T
j
Internally Limited
- 55 to 150
°C
°C
T
stg
VNQ830M
QUAD CHANNEL HIGH SIDE DRIVER
(*) Per each channel
I
CMOS COMPATIBLE INPUTS
I
OPEN DRAIN STATUS OUTPUTS
I
ON STATE OPEN LOAD DETECTION
I
OFF STATE OPEN LOAD DETECTION
I
SHORTED LOAD PROTECTION
I
UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
I
LOSS OF GROUND PROTECTION
I
VERY LOW STAND-BY CURRENT
I
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ830M is a quad HSD formed by
assembling two VND830M chips in the same SO-
28 package. The VND830M is a monolithic device
made by using
|
STMicroelectronics VIPower M0-
3 Technology. The VNQ830M is intended for
driving any type of multiple loads with one side
connected to ground.
Active V
CC
pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protects the device against overload.
The device detects open load condition both in on
and off state. The openload threshold is aimed at
detecting the 5W/12V standard bulb as an
openload fault in the on state. Output shorted to
V
is detected in the off state. Device
automatically turns off in case of ground pin
disconnection.
TYPE
R
DS(on)
60 m
(*)
I
OUT
6 A (*)
V
CC
36 V
VNQ830M
SO-28 (DOUBLE ISLAND)
ORDER CODES
TUBE
VNQ830M
PACKAGE
SO-28
T&R
VNQ830M13TR
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VNQ830M-E | 功能描述:功率驅(qū)動器IC Quad Channel Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNQ830MTR-E | 功能描述:功率驅(qū)動器IC Quad Channel Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNQ830P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:QUAD CHANNEL HIGH SIDE DRIVER |
| VNQ830P-E | 功能描述:功率驅(qū)動器IC Quad Ch HiSide Drivr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNQ830PEP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:QUAD CHANNEL HIGH SIDE DRIVER |
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