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參數(shù)資料
| 型號： | VNQ810 |
| 廠商： | 意法半導體 |
| 英文描述： | QUAD CHANNEL HIGH SIDE DRIVER |
| 中文描述： | 四通道高邊驅(qū)動器 |
| 文件頁數(shù)： | 1/21頁 |
| 文件大?。?/td> | 212K |
| 代理商： | VNQ810 |
July 2004
1/21
VNQ810
QUAD CHANNEL HIGH SIDE DRIVER
I
CMOS COMPATIBLE INPUTS
I
OPEN DRAIN STATUS OUTPUTS
I
ON STATE OPEN LOAD DETECTION
I
OFF STATE OPEN LOAD DETECTION
I
SHORTED LOAD PROTECTION
I
UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
I
PROTECTION
AGAINST
LOSS OF GROUND
I
VERY LOW STAND-BY CURRENT
I
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ810 is a quad HSD formed by
assembling two VND810 chips in the same SO-28
package. The VND810 is a monolithic device
made by using
STMicroelectronics VIPower M0-3
Technology, intended for driving any kind of load
with one side connected to ground.
Active V
CC
pin voltage clamp protects the device
ABSOLUTE MAXIMUM RATING
against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protects the device against overload. The
device detects open load condition both in on and
off state . Output shorted to V
CC
is detected in the
off state. Device automatically turns off in case of
ground pin disconnection.
TYPE
R
DS(on)
160 m
(*)
I
OUT
V
CC
36 V
VNQ810
3.5 A (*)
SO-28 (DOUBLE ISLAND)
ORDER CODES
TUBE
VNQ810
PACKAGE
SO-28
T&R
VNQ81013TR
(*)
Per each channel
(**) See application schematic at page 9
Symbol
V
CC
- V
CC
- I
gnd
I
OUT
- I
OUT
I
IN
I
STAT
Parameter
Value
41
- 0.3
- 200
Unit
V
V
mA
A
A
mA
mA
DC Supply Voltage
Reverse DC Supply Voltage
DC Reverse Ground Pin Current
DC Output Current
Reverse DC Output Current
DC Input Current
DC Status Current
Electrostatic Discharge (Human Body Model: R=1.5K
;
C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
Maximum Switching Energy
(L=1.38mH; R
L
=0
; V
bat
=13.5V; T
jstart
=150oC; I
L
=5A)
Power dissipation (per island) at T
lead
=25°C
Junction Operating Temperature
Storage Temperature
Internally Limited
- 6
+/- 10
+/- 10
V
ESD
4000
4000
5000
5000
V
V
V
V
E
MAX
23
mJ
P
tot
T
j
T
stg
6.25
W
°C
°C
Internally Limited
- 55 to 150
Rev. 1
相關PDF資料 |
PDF描述 |
|---|---|
| VNQ81013TR | CLIP, RM6; Depth, external:2.6mm; Width, external:10.9mm RoHS Compliant: Yes |
| VNQ830M | QUAD CHANNEL HIGH SIDE DRIVER |
| VNQ830M13TR | CLIP, RM10; Depth, external:4.8mm; Width, external:17mm RoHS Compliant: Yes |
| VNQ830P | QUAD CHANNEL HIGH SIDE DRIVER |
| VNQ830PEP | QUAD CHANNEL HIGH SIDE DRIVER |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VNQ810 | 制造商:STMicroelectronics 功能描述:IC, MOSFET, SMART SWITCH, SO-28 |
| VNQ81013TR | 功能描述:功率驅(qū)動器IC Quad Channel Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNQ810-E | 功能描述:功率驅(qū)動器IC Quad Channel Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNQ810M | 功能描述:功率驅(qū)動器IC Quad Channel Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNQ810M13TR | 功能描述:功率驅(qū)動器IC Quad Channel Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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