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參數(shù)資料
| 型號(hào)： | VNQ810 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | QUAD CHANNEL HIGH SIDE DRIVER |
| 中文描述： | 四通道高邊驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 9/21頁(yè) |
| 文件大?。?/td> | 212K |
| 代理商： | VNQ810 |
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VNQ810
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
GND
only). This
can be used with any type of load.
The following is an indication on how to dimension the
R
GND
resistor.
1) R
GND
≤
600mV / 2(I
S(on)max
).
2) R
GND
≥ (
V
CC
) / (-I
GND
)
where -I
is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the of
the device’s datasheet.
Power Dissipation in R
GND
(when V
CC
<0: during reverse
battery situations) is:
PROTECTION
NETWORK
AGAINST
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
will
produce a shift (I
* R
) in the input thresholds
and the status output values. This shift will vary
depending on many devices are ON in the case of several
high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggest to utilize Solution 2.
V
CC1,2
OUTPUT2
+5V
R
prot
OUTPUT1
STATUS1
INPUT1
+5V
STATUS2
INPUT2
+5V
D
GND
R
GND
V
GND
GND1,2
GND3,4
OUTPUT3
OUTPUT4
μ
C
V
CC3,4
STATUS3
INPUT3
STATUS4
INPUT4
+5V
+5V
R
prot
R
prot
R
prot
R
prot
R
prot
R
prot
R
prot
D
ld
Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.
APPLICATION SCHEMATIC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VNQ81013TR | CLIP, RM6; Depth, external:2.6mm; Width, external:10.9mm RoHS Compliant: Yes |
| VNQ830M | QUAD CHANNEL HIGH SIDE DRIVER |
| VNQ830M13TR | CLIP, RM10; Depth, external:4.8mm; Width, external:17mm RoHS Compliant: Yes |
| VNQ830P | QUAD CHANNEL HIGH SIDE DRIVER |
| VNQ830PEP | QUAD CHANNEL HIGH SIDE DRIVER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VNQ810 | 制造商:STMicroelectronics 功能描述:IC, MOSFET, SMART SWITCH, SO-28 |
| VNQ81013TR | 功能描述:功率驅(qū)動(dòng)器IC Quad Channel Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNQ810-E | 功能描述:功率驅(qū)動(dòng)器IC Quad Channel Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNQ810M | 功能描述:功率驅(qū)動(dòng)器IC Quad Channel Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VNQ810M13TR | 功能描述:功率驅(qū)動(dòng)器IC Quad Channel Hi-Side RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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