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參數(shù)資料
| 型號(hào)： | V826632M24SAIW-D3 |
| 廠商： | PROMOS TECHNOLOGIES INC |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM MODULE, 0.65 ns, ZMA172 |
| 封裝： | GREEN, MICRO, DIMM-172 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 161K |
| 代理商： | V826632M24SAIW-D3 |
ProMOS TECHNOLOGIES
V826632M24SA
11
V826632M24SA Rev.1.3 April 2006
Notes: 1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter.
2. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, CS, RAS, CAS, WE.
3. For command/address input slew rate >=1.0V/ns
4. For command/address input slew rate >=0.5V/ns and <1.0V/ns
5. CK, CK slew rates are >=1.0V/ns
6. These parameters guarantee device timing, but they are not necessarily tested on each device, and they may be guaranteed
by design or tester correlation.
7. Data latched at both rising and falling edges of Data Strobes(DQS) : DQ, DM
8. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete
Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM.
Data-In Setup Time to DQS-In (DQ
& DM)
tDS
0.40
-
0.40
-
0.45
-
0.5
-
0.5
-
tCK
7
Data-in Hold Time to DQS-In (DQ &
DM)
tDH
0.40
-
0.40
-
0.45
-
0.5
-
0.5
-
tCK
7
DQ & DM Input Pulse Width
tDIPW
1.75
-
1.75
-
1.75
-
1.75
-
1.75
-
tCK
Read DQS Preamble Time
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read DQS Postamble Time
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Write DQS Preamble Setup Time
tWPRES
0
-
0
-
0
-
0
-
0
-
tCK
Write DQS Preamble Hold Time
tWPREH 0.25
-
0.25
-
0.25
-
0.25
-
0.25
-
tCK
Write DQS Postamble Time
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Mode Register Set Delay
tMRD
2-
2
-
2
-
2
-
tCK
Power Down Exit Time to any com-
mand
tXPDN
1
-
1
-
1
-
1
-
1
-
tCK
Exit Self Refresh to Non-Read
Command
tXSNR
200
-
200
-
200
-
200
-
200
-
tCK
8
Average Periodic Refresh Interval
tREFI
-
7.8
-
7.8
-
7.8
-
7.8
-
7.8
us
Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
0 ~ 70
°C
Storage Temperature
TSTG
-55 ~ 125
°C
Voltage on Any Pin relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD relative to VSS
VDD
-0.5 ~ 3.6
V
Voltage on VDDQ relative to VSS
VDDQ
-0.5 ~ 3.6
V
Output Short Circuit Current
IOS
50
mA
Power Dissipation
PD
6W
Soldering Temperature Time
TSOLDER
260 10
°C Sec
Parameter
Sym-
bol
(PC400A)
D0
(PC400B)
D3
(PC333)
C0
(PC266A)
B1
(PC266B)
B0
Units
Note
Min
Max Min
Max
Min
Max
Absolute Maximum Ratings
AC Characteristics (cont.)
Note: Operation at above absolute maximum rating can adversely affect device reliability
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