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參數(shù)資料
| 型號： | V826632M24SAIW-D3 |
| 廠商： | PROMOS TECHNOLOGIES INC |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM MODULE, 0.65 ns, ZMA172 |
| 封裝： | GREEN, MICRO, DIMM-172 |
| 文件頁數(shù)： | 14/14頁 |
| 文件大?。?/td> | 161K |
| 代理商： | V826632M24SAIW-D3 |
ProMOS TECHNOLOGIES
V826632M24SA
9
V826632M24SA Rev.1.3 April 2006
DDR SDRAM Module IDD Spec Table
Symbol
D0 / D3
PC3200@CL=3
C0
PC2700A@CL=2.5
B1
PC2100A@CL=2
B0
PC2100B@CL=2.5
Unit
IDD0
960
880
800
mA
IDD1
1280
1120
960
mA
IDD2P
60
mA
IDD2F
330
280
250
mA
IDD2Q
220
190
170
mA
IDD3P
340
300
260
mA
IDD3N
580
480
380
mA
IDD4R
2160
1840
1520
mA
IDD4W
2000
1680
1360
mA
IDD5
1680
1600
1520
mA
IDD6
Normal
48
mA
Low power
29
mA
IDD7
3200
2800
2400
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Detailed test conditions for DDR SDRAM IDD1 & IDD
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
*50% of data changing at every burst
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
- DDR400A (200MHz, CL=2.5) : tCK=5ns, CL=2.5, BL=4, tRCD=3*tCK, tRC=12*tCK, tRAS=8*tCK
*50% of data changing at every burst
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
- DDR400B (200MHz, CL=3) : tCK=5ns, CL=3, BL=4, tRCD=3*tCK, tRC=12*tCK, tRAS=8*tCK
*50% of data changing at every burst
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
- DDR333 (166MHz, CL=2.5) : tCK=6ns, CL=2.5, BL=4, tRCD=3*tCK, tRC=10*tCK, tRAS=7*tCK
1. Typical Case : Vdd = 2.5V, T=25’ C
2. Worst Case : Vdd = 2.7V, T= 10’ C
per clock cycle. lout = 0mA
3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once
4. Timing patterns
IDD1 : Operating current: One bank operation
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相關代理商/技術(shù)參數(shù) |
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|---|---|
| V826664G24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64 |
| V826664K24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V827316K04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332K04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332N04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE |
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