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參數(shù)資料
| 型號： | V58C2256164SBLJ5B |
| 廠商： | PROMOS TECHNOLOGIES INC |
| 元件分類： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 0.65 ns, PBGA60 |
| 封裝： | LEAD FREE, MO-233, FBGA-60 |
| 文件頁數(shù)： | 42/62頁 |
| 文件大?。?/td> | 983K |
| 代理商： | V58C2256164SBLJ5B |
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ProMOS TECHNOLOGIES
V58C2256(804/404/164)SB
V58C2256(804/404/164)SB Rev. 1.0 November 2003
Half strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figure b.
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
from 0 to VDDQ/2
Iout
(m
A
)
Minimum
Typical Low
Typical High
Maximum
0
10
20
30
40
50
60
70
80
90
0.0
1.0
2.0
Iout
(m
A)
Vout(V)
Maximum
Typical High
Minumum
Iout(
m
A)
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
0.5
1.0
1.5
2.0
2.5
Typical Low
VDDQ — Vout(V)
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