參數(shù)資料
型號(hào): V58C2128164SBLS7
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: 8M X 16 DDR DRAM, 0.75 ns, PBGA60
封裝: MO-233, FBGA-60
文件頁(yè)數(shù): 44/62頁(yè)
文件大?。?/td> 977K
代理商: V58C2128164SBLS7
49
ProMOS TECHNOLOGIES
V58C2128(804/404/164)SB
V58C2128(804/404/164)SB Rev. 1.1 March 2004
The above characteristics are specified under best, worst and normal process variation/conditions
Figure 36 - DATA INPUT (WRITE) TIMING
DI n = Data In for column n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are applied in the programmed
order following DI n
Figure 37 - DATA OUTPUT (READ) TIMING
1. tDQSQ max occurs when DQS is the earliest among DQS and DQ signals to transition.
2. tDQSQ min occurs when DQS is the latest among DQS and DQ signals to transition.
3. tDQSQ nom, shown for reference, occurs when DQS transitions in the center among DQ signal transitions.
DON'T CARE
DQ
DM
DQS
DI
n
tDS
tDH
tDS
tDH
tDSL tDSH
t
min
DQSQ
t
max
DQSQ
DQ
DQS
t
min
DQSQ
t
max
DQSQ
t
nom
DQSQ
Burst Length = 4 in the case shown
tDV
DQS, DQ
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