參數(shù)資料
型號(hào): V54C3256804VBS7
廠商: PROMOS TECHNOLOGIES INC
元件分類(lèi): DRAM
英文描述: 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
封裝: MO-210, FBGA-60
文件頁(yè)數(shù): 11/50頁(yè)
文件大?。?/td> 728K
代理商: V54C3256804VBS7
19
V54C3256(16/80/40)4VB Rev. 1.0 December 2003
ProMOS TECHNOLOGIES
V54C3256(16/80/40)4VB
Timing Diagrams
1. Bank Activate Command Cycle
2. Burst Read Operation
3. Read Interrupted by a Read
4. Read to Write Interval
4.1 Read to Write Interval
4.2 Minimum Read to Write Interval
4.3 Non-Minimum Read to Write Interval
5. Burst Write Operation
6. Write and Read Interrupt
6.1 Write Interrupted by a Write
6.2 Write Interrupted by Read
7. Burst Write & Read with Auto-Precharge
7.1 Burst Write with Auto-Precharge
7.2 Burst Read with Auto-Precharge
8. Burst Termination
8.1 Termination of a Burst Write Operation
8.2 Termination of a Burst Write Operation
9. AC- Parameters
9.1 AC Parameters for a Write Timing
9.2 AC Parameters for a Read Timing
10. Mode Register Set
11. Power on Sequence and Auto Refresh (CBR)
12. Power Down Mode
13. Self Refresh (Entry and Exit)
14. Auto Refresh (CBR)
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