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參數(shù)資料
| 型號(hào)： | UTD410L-TN3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 30 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 182K |
| 代理商： | UTD410L-TN3-R |
UTD410
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 5
www.unisonic.com.tw
QW-R502-142.A
TYPICAL CHARACTERISTICS(Cont.)
0
8
2
Total Gate Charge, Qg (nC)
Ga
te
-S
ou
rc
eVo
lta
ge
,V
GS
(V
)
Gate-Charge Characteristics
8
24
6
0
4
10
0
Drain-Source Voltage, VDS (V)
Ca
pacitance
(p
F)
Capacitance Characteristics
30
515
25
0
20
10
6
200
400
600
800
1000
1200
1400
VDS=15V
ID=8A
CISS
COSS
CRSS
Conti
nuou
sDrain
Curre
nt,
I
D
(A)
Power
(W)
0.00001
Pulse Width (s)
Normalized
Tra
n
sient
Thermal
Resistance,
Z
θ
JA
Normalized Maximum Transient Thermal Impedance
0.1
0.0001
0.01
10
0.1
0.001
1
10
100
1000
1
0.01
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TON
PD
T
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