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參數(shù)資料
| 型號(hào)： | UTD410L-TN3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 8 A, 30 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 182K |
| 代理商： | UTD410L-TN3-R |
UTD410
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R502-142.A
TYPICAL CHARACTERISTICS
C
ontin
uous
D
ra
in
C
urre
nt,
I D
(A
)
C
ontin
uous
D
ra
in
C
urre
nt,
I
D
(A
)
On
-R
esi
sta
nc
e,
R
DS
(O
N
)(m
Ω
)
No
rma
lize
dOn
-Resi
sta
nce
0
150
50
Gate-Source Voltage, VGS (V)
On-Re
sis
tanc
e,
R
DS
(O
N)
(m
Ω
)
On-Resistance vs. Gate-Source Voltage
10
4
36
8
10
90
110
190
0.0
Source-Drain Voltage, VSD (V)
Max
imum
Con
tin
uo
us
D
ra
in-So
urce
Diod
e
For
w
ard
Curr
ent,
I S
(A)
Body-Diode Characteristics
1.2
0.2
0.6
1.0
1.0E-06
ID=8A
0.8
0.4
125
25
170
130
70
30
125
25
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
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| UTD413 | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:P-CHANNEL ENHANCEMENT MODE |
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