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參數(shù)資料
| 型號： | UTD410L-TN3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 30 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 182K |
| 代理商： | UTD410L-TN3-R |
UTD410
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-142.A
ABSOLUTE MAXIMUM RATINGS (TA = 25 , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
8
Pulsed Drain Current (Note1)
IDM
20
A
Repetitive Avalanche Energy (L=0.1mH Note1)
EAR
10
mJ
Power Dissipation
PD
25
W
Junction Temperature
TJ
+175
Storage Temperature
TSTG
-55 ~ +175
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
46
60
/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250A
30
V
Drain-Source Leakage Current
IDSS
VDS =24V,VGS =0V
1
A
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20V
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =250A
1
1.8
3
V
VGS=10V, ID =8A
48
65
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID =2A
75
105
m
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
288
pF
Output Capacitance
COSS
57
pF
Reverse Transfer Capacitance
CRSS
VDS =15 V, VGS =0V, f=1MHz
39
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
3.7
ns
Turn-On Rise Time
tR
3.7
ns
Turn-Off Delay Time
tD(OFF)
15.6
ns
Turn-Off Fall-Time
tF
VGS=10V,VDD=15V, RL=1.8,
RG=3
2.6
ns
Total Gate Charge
QG
6.72
nC
Gate-Source Charge
QGS
0.76
nC
Gate-Drain Charge
QGD
VGS=10V, VDS=15V, ID=8A
1.78
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=1A
0.75
1
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
4.3
A
Reverse Recovery Time
tRR
12.6
ns
Reverse Recovery Charge
QRR
IF=8A, dIF/dt=100A/s
5.1
nC
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board
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相關(guān)代理商/技術(shù)參數(shù) |
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| UTD413 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:P-CHANNEL ENHANCEMENT MODE |
| UTD413G-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:P-CHANNEL ENHANCEMENT MODE |
| UTD413G-TN3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:P-CHANNEL ENHANCEMENT MODE |
| UTD413L-TN3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:P-CHANNEL ENHANCEMENT MODE |
| UTD413L-TN3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:P-CHANNEL ENHANCEMENT MODE |
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