參數(shù)資料
型號(hào): UPD45128163G5-A80T-9JF
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
中文描述: 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: PLASTIC, TSOP2-54
文件頁(yè)數(shù): 21/86頁(yè)
文件大?。?/td> 774K
代理商: UPD45128163G5-A80T-9JF
Data Sheet E0348N10 (Ver. 1.0)
21
μ
PD45128163-T
7.1 Burst Length and Sequence
[Burst of Two]
Starting address
(column address A0, binary)
Sequential addressing sequence
(decimal)
Interleave addressing sequence
(decimal)
0
0, 1
0, 1
1
1, 0
1, 0
[Burst of Four]
Starting address
(column address A1 - A0, binary)
Sequential addressing sequence
(decimal)
Interleave addressing sequence
(decimal)
00
0, 1, 2, 3
0, 1, 2, 3
01
1, 2, 3, 0
1, 0, 3, 2
10
2, 3, 0, 1
2, 3, 0, 1
11
3, 0, 1, 2
3, 2, 1, 0
[Burst of Eight]
Starting address
(column address A2 - A0, binary)
Sequential addressing sequence
(decimal)
Interleave addressing sequence
(decimal)
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 4, 5, 6, 7, 0
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 4, 5, 6, 7, 0, 1
2, 3, 0, 1, 6, 7, 4, 5
011
3, 4, 5, 6, 7, 0, 1, 2
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 0, 1, 2, 3, 4, 5
6, 7, 4, 5, 2, 3, 0, 1
111
7, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0
Full page burst is an extension of the above tables of sequential addressing, with the length being 512 (for 8M
×
16
device).
相關(guān)PDF資料
PDF描述
UPD45128163G5-A75T-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A10T-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
UPD45128163G5-A80-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL
UPD45128441G5-A10-9JF 128M-bit Synchronous DRAM 4-bank, LVTTL
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