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參數(shù)資料
| 型號： | UPD42S18165L |
| 廠商： | NEC Corp. |
| 英文描述： | 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE |
| 中文描述： | 3.3 V工作16 m位動態(tài)隨機存儲器1個M字由16位，江戶，字節(jié)讀/寫模式 |
| 文件頁數(shù)： | 5/48頁 |
| 文件大小： | 319K |
| 代理商： | UPD42S18165L |
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μ
PD42S18165L, 4218165L
5
Input/Output Pin Functions
The
μ
PD42S18165L, 4218165L have input pins RAS, CAS
Note
, WE, OE, A0 to A9 and input/output pins I/O1 to
I/O16.
Pin name
RAS
(Row address strobe)
CAS
(Column address strobe)
A0 to A9
(Address inputs)
WE
(Write enable)
OE
(Output enable)
I/O1 to I/O16
(Data inputs/outputs)
Input/Output
Function
Input
RAS activates the sense amplifier by latching a row address and selecting a
corresponding word line.
It refreshes memory cell array of one line selected by the row address.
It also selects the following function.
CAS before RAS refresh
CAS activates data input/output circuit by latching column address and
selecting a digit line connected with the sense amplifier.
Address bus.
Input total 20-bit of address signal, upper 10-bit and lower 10-bit in sequence
(address multiplex method).
Therefore, one word is selected from 1,048,576-word by 16-bit memory cell
array.
In actual operation, latch row address by specifying row address and
activating RAS.
Then, switch the address bus to column address and activate CAS.
Each address is taken into the device when RAS and CAS are activated.
Therefore, the address input setup time (t
ASR
, t
ASC
) and hold time (t
RAH
, t
CAH
)
are specified for the activation of RAS and CAS.
Write control signal.
Write operation is executed by activating RAS, CAS and WE.
Read control signal.
Read operation can be executed by activating RAS, CAS and OE.
If WE is activated during read operation, OE is to be ineffective in the device.
Therefore, read operation cannot be executed.
Input/Output
16-bit data bus.
I/O1 to I/O16 are used to input/output data.
Note
CAS means UCAS and LCAS.
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