參數(shù)資料
型號: UPD42S18165L
廠商: NEC Corp.
英文描述: 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
中文描述: 3.3 V工作16 m位動態(tài)隨機存儲器1個M字由16位,江戶,字節(jié)讀/寫模式
文件頁數(shù): 10/48頁
文件大?。?/td> 319K
代理商: UPD42S18165L
μ
PD42S18165L, 4218165L
10
AC Characteristics
(Recommended Operating Conditions unless otherwise noted)
AC Characteristics Test Conditions
(1) Input timing specification
(2) Output timing specification
(3) Output load condition
Common to Read, Write, Read Modify Write Cycle
Parameter
Symbol
t
RAC
= 50 ns
t
RAC
= 60 ns
t
RAC
= 70 ns
Unit
Notes
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Read / Write cycle time
t
RC
84
104
124
ns
RAS precharge time
t
RP
30
40
50
ns
CAS precharge time
t
CPN
8
10
10
ns
RAS pulse width
t
RAS
50
10,000
60
10,000
70
10,000
ns
1
CAS pulse width
t
CAS
8
10,000
10
10,000
12
10,000
ns
RAS hold time
t
RSH
10
10
12
ns
CAS hold time
t
CSH
38
40
50
ns
RAS to CAS delay time
t
RCD
11
37
14
45
14
52
ns
2
RAS to column address delay time
t
RAD
9
25
12
30
12
35
ns
2
CAS to RAS precharge time
t
CRP
5
5
5
ns
3
Row address setup time
t
ASR
0
0
0
ns
Row address hold time
t
RAH
7
10
10
ns
Column address setup time
t
ASC
0
0
0
ns
Column address hold time
t
CAH
7
10
12
ns
OE lead time referenced to RAS
t
OES
0
0
0
ns
CAS to data setup time
t
CLZ
0
0
0
ns
OE to data setup time
t
OLZ
0
0
0
ns
OE to data delay time
t
OED
10
13
15
ns
Masked byte write hold time referenced to RAS
t
MRH
0
0
0
ns
Transition time (rise and fall)
t
T
1
50
1
50
1
50
ns
Refresh time
μ
PD42S18165L
t
REF
128
128
128
ms
4
μ
PD4218165L
16
16
16
ms
V
IH (MIN.)
= 2.0 V
V
IL (MAX.)
= 0.8 V
V
OH(MIN.)
= 2.0 V
V
OL(MAX.)
= 0.8 V
t
T
= 2 ns
t
T
= 2 ns
1,180
V
CC
870
100 pF
I/O
C
L
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