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參數(shù)資料
| 型號： | UPA810T |
| 廠商： | California Eastern Laboratories |
| 英文描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | NPN硅高頻晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 207K |
| 代理商： | UPA810T |
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
20
V
CEO
Collector to Emitter Voltage
V
12
V
EBO
Emitter to Base Voltage
V
3
I
C
Collector Current
mA
100
P
T
Total Power Dissipation
1 Die
2 Die
mW
mW
110
200
T
J
Junction Temperature
°
C
150
T
STG
Storage Temperature
°
C
-65 to +150
Note: 1.Operation in excess of any one of these parameters
may result in permanent damage.
PART NUMBER
QUANTITY
PACKAGING
UPA810T
Loose Products (50 pcs)
Embossed tape 8mm wide. Pin 6 (Q1 Base),
Pin 5 (Q1 Emmitter) Pin 4 (Q2 Emitter)
face to perforation side of tape
UPA810T-T1
Taping products
(3 KPCS/Reel)
ORDERING INFORMATION (Solder Contains Lead)
PART NUMBER
QUANTITY
PACKAGING
UPA810T-A
Loose Products (50 pcs)
Embossed tape 8mm wide. Pin 6 (Q1 Base),
Pin 5 (Q1 Emmitter) Pin 4 (Q2 Emitter)
face to perforation side of tape
UPA810T-T1-A
Taping products
(3 KPCS/Reel)
ORDERING INFORMATION (Pb-Free)
UPA810T
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA810T-A | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA810T-T1 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA810T-T1-A | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA814T | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA814T-T1-A | NPN SILICON HIGH FREQUENCY TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA810T-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA810TC | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| UPA810TC-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT NPN 12V 0.1A 6-Pin Case TC T/R |
| UPA810TF | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA810TF-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
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