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參數(shù)資料
| 型號： | UPA814T |
| 廠商： | California Eastern Laboratories |
| 英文描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | NPN硅高頻晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 157K |
| 代理商： | UPA814T |
UPA814T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
SMALL PACKAGE STYLE:
2 NE688 Die in a 2 mm x 1.25 mm package
LOW NOISE FIGURE:
NF = 1.5 dB TYP at 2 GHz
HIGH GAIN BANDWIDTH:
f
T
= 9 GHz
HIGH COLLECTOR CURRENT:
100 mA
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE S06
DESCRIPTION
NEC's UPA814T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T
, low voltage bias and small size make this device suited for
various hand-held wireless applications.
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
9
V
CEO
Collector to Emitter Voltage
V
6
V
EBO
Emitter to Base Voltage
V
2
I
C
Collector Current
mA
100
P
T
Total Power Dissipation
1 Die
2 Die
mW
mW
110
200
T
J
Junction Temperature
°
C
150
T
STG
Storage Temperature
°
C
-65 to +150
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
PART NUMBER
PACKAGE OUTLINE
UPA814T
S06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
μ
A
0.1
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
μ
A
0.1
h
FE1
Forward Current Gain at V
CE
= 1 V, I
C
= 3 mA
80
110
160
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
GHz
9.0
Cre
2
Feedback Capacitance at V
CB
= 1 V, I
E
= 0, f = 1 MHz
pF
0.75
0.85
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
=20 mA, f = 2 GHz
dB
6.5
NF
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
dB
1.5
h
FE1
/h
FE2
h
FE
Ratio:
0.85
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes: 1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA814T-T1, 3K per reel.
Note:
Pin 3 is identified with a circle on the bottom of the package.
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
California Eastern Laboratories
h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
2.1
±
0.1
1.25
±
0.1
0 ~ 0.1
0.15
0.9
±
0.1
0.7
2.0
±
0.2
0.65
1.3
1
2
3
4
5
6
0.2 (All Leads)
+0.10
- 0.05
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| UPA814T-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA814TC | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| UPA814TC-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| UPA814TF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| UPA814TF-T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
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