- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384039 > UPA810T-T1-A (California Eastern Laboratories) NPN SILICON HIGH FREQUENCY TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | UPA810T-T1-A |
| 廠商： | California Eastern Laboratories |
| 英文描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | NPN硅高頻晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 207K |
| 代理商： | UPA810T-T1-A |
SILICON TRANSISTOR
UPA810T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
SMALL PACKAGE STYLE:
2 NE856 Die in a 2 mm x 1.25 mm package
LOW NOISE FIGURE:
NF = 1.2 dB TYP at 1 GHz
HIGH GAIN:
|S
21E
|
2
= 9.0 dB TYP at 1 GHz
EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
HIGH COLLECTOR CURRENT:
100 mA
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE S06
(Top View)
DESCRIPTION
NEC's UPA810T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T
, low voltage bias and small size make this device suited for
various hand-held wireless applications.
PRELIMINARY DATA SHEET
Note:
Pin 3 is identified with a circle on the bottom of the package.
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
2.1
±
0.1
1.25
±
0.1
0 ~ 0.1
0.15
0.9
±
0.1
0.7
2.0
±
0.2
0.65
1.3
1
2
3
4
5
6
0.2 (All Leads)
+0.10
- 0.05
Date Published: June 28, 2005
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
PART NUMBER
PACKAGE OUTLINE
UPA810T
S06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
μ
A
1.0
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
μ
A
1.0
h
FE1
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
70
120
250
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA
GHz
3.0
4.5
Cre
2
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
pF
0.7
1.5
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
=7 mA, f = 1 GHz
dB
7
9
NF
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
dB
1.2
2.5
h
FE1
/h
FE2
h
FE
Ratio:
0.85
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes: 1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA810T-T1, 3K per reel.
h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA814T | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA814T-T1-A | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA821TF | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA827TF-T1-A | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA829TF | RAC15-SB(-E)(-ST) Series - Powerline Regulated AC-DC Converters; Output Voltage (Vdc): 5V; Features: Compact AC-DC Power Supply; 15 Watt PCB Mount Package; Universal Input Voltage Range; 4000VAC Isolation; Low Output Ripple and Noise; Short Circuit Protected; UL-60601 Certified for Medical Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA811 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD |
| UPA811T | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA811T-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA811T-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT NPN 10V 0.035A 6-Pin SOT-363 T/R |
| UPA811T-T1-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。