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參數(shù)資料
| 型號： | UPA829TF |
| 廠商： | NEC Corp. |
| 英文描述： | RAC15-SB(-E)(-ST) Series - Powerline Regulated AC-DC Converters; Output Voltage (Vdc): 5V; Features: Compact AC-DC Power Supply; 15 Watt PCB Mount Package; Universal Input Voltage Range; 4000VAC Isolation; Low Output Ripple and Noise; Short Circuit Protected; UL-60601 Certified for Medical Applications |
| 中文描述： | NPN硅高頻晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 15K |
| 代理商： | UPA829TF |
UPA829TF
NPN SILICON HIGH
FREQUENCY TRANSISTOR
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
2/99
California Eastern Laboratories
SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2.0 mm x 1.25 mm
LOW HEIGHT PROFILE:
Just 0.60 mm high
HIGH COLLECTOR CURRENT:
I
C
MAX = 100 mA
DESCRIPTION
The UPA829TF contains two NE688 NPN high frequency
silicon bipolar chips. NEC's new low profile TF package is ideal
for all portable wireless applications where reducing compo-
nent height is a prime consideration. Each transistor chip is
independently mounted and easily configured for oscillator/
buffer amplifier and other applications.
FEATURES
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
V
CBO
Collector to Base Voltage
V
CEO
Collector to Emitter Voltage
V
EBO
Emitter to Base Voltage
I
C
Collector Current
P
T
Total Power Dissipation
1 Die
2 Die
T
J
Junction Temperature
T
STG
Storage Temperature
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
UNITS
V
V
V
mA
RATINGS
9
6
2
100
mW
mW
°
C
°
C
110
200
150
-65 to +150
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE TS06
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
2.1
±
0.1
1.25
±
0.1
0 ~ 0.1
0.13
±
0.05
0.6
±
0.1
2.0
±
0.2
0.65
1.3
1
2
3
4
5
6
0.22
(All Leads)
+0.10
0.45
Q1
Q2
PART NUMBER
PACKAGE OUTLINE
UPA829TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
NF
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain
1
at V
CE
= 1 V, I
C
= 3 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 1 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=20 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
μ
A
μ
A
0.1
0.1
160
80
110
9.0
0.75
6.5
1.5
GHz
pF
dB
dB
0.85
h
FE1
/h
FE2
h
FE
Ratio:
0.85
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes: 1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA829TF-T1, 3K per reel.
h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
Note: Pin 1 is the
lower left most pin as
the package lettering
is oriented and read
left to right.
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