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參數(shù)資料
| 型號(hào)： | UPA573T |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)管的5引腳2電路的開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 63K |
| 代理商： | UPA573T |
μ
PA573T
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
0
100
80
60
40
20
T
C
- Case Temperature - C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
0
250
200
150
100
50
T
A
- Ambient Temperature - C
TRANSFER CHARACTERISTICS
I
D
–1.0
–100
–10
–1
–0.1
–0.01
–0.001
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
V
G
–50
–2.6
–2.2
–1.8
–1.4
–1.0
T
ch
- Channel Temperature - C
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
|
f
|
–0.5
200
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
D
–2
30
20
10
V
GS
- Gate to Source Voltage - V
V
DS
= –3 V
Pulsed
measurement
20
40
60
80
100
120
140
160
30
60
90
120
150
180
Total power
dissipation
Toa
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
T
A
= 150 C
75 C
25 C
–25 C
0
50
100
150
V
DS
= –3 V
I
D
= –10 A
V
DS
= –3 V
Pulsed
measurement
100
50
20
10
5
2
1
–1
–2
–5
–10 –20
–50 –100 –200
–10 mA
T
A
= –25 C
25 C
75 C
150 C
–3
–4
–5
–6
–7
–8
I
D
= –100 mA
Pulsed
measurement
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA573T-T1-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 0.1A 5-Pin SC-70 T/R |
| UPA574T(T1-A) | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 50V 0.1A 5-Pin SC-74A T/R |
| UPA600T(T1-A) | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 50V 0.1A 6-Pin SC-74 T/R |
| UPA601T(T1-A) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| UPA602T | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FET 6-PIN 2 CIRCUITS |
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