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參數(shù)資料
| 型號(hào)： | UPA507TE |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)管與肖特基二極管的開關(guān) |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 146K |
| 代理商： | UPA507TE |
Data Sheet G16626EJ1V1DS
6
μ
PA507TE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
D
0
50
100
150
200
- 50
0
50
100
150
V
GS
=
1.8 V
2.5 V
4.5 V
I
D
=
1.0 A
Pulsed
T
ch
- Channel Temperature -
°
C
C
i
,
o
,
r
10
100
1000
- 0.01
- 0.1
- 1
- 10
- 100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
t
d
,
r
,
d
,
f
1
10
100
- 0.1
- 1
- 10
V
DD
=
10 V
V
GS
=
4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
V
G
0
- 1
- 2
- 3
- 4
0
1
2
3
4
5
I
D
=
1.0 A
V
DD
=
4.0 V
10 V
16 V
Q
G
- Gate Change - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
0.01
0.1
1
10
0.4
0.6
0.8
1
1.2
Pulsed
V
GS
= 0 V
V
F(S-D)
- Source to Drain Voltage - V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA508TE | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING |
| UPA53C | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| UPA54H | 制造商:Panasonic Industrial Company 功能描述:DIODE |
| UPA54HA | 制造商:Panasonic Industrial Company 功能描述:DIODE |
| UPA56C | 制造商:NEC Electronics Corporation 功能描述:Bipolar Junction Transistor, Array, DIP |
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