參數(shù)資料
型號: UPA505T
廠商: NEC Corp.
英文描述: N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS
中文描述: N-CHANNEL/P-CHANNEL場效應晶體管5針2電路
文件頁數(shù): 7/9頁
文件大?。?/td> 88K
代理商: UPA505T
7
μ
PA505T
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
100
50
–2
I
D
- Drain Current - mA
R
D
0
V
GS
= –4 V
Pulsed
measurement
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
100
50
0
–8
–16
–20
V
GS
- Gate to Source Voltage - V
R
D
–12
Pulsed
measurement
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
140
100
60
–30
0
30
60
90
120
150
T
ch
- Channel Temperature - C
R
D
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
10
1
0.1
–50
–100
V
DS
- Drain to Source Voltage - V
C
i
,
o
,
r
0.1
V
GS
= –4 V
I
D
= –10 mA
20
SWITCHING CHARACTERISTICS
500
50
20
–100
I
D
- Drain Current - mA
t
d
,
r
,
d
,
f
10
t
f
t
r
V
DD
= –5.0 V
V
GS
= –4 V
R
G
= 10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.6
V
SD
- Source to Drain Voltage - V
I
S
0.10.5
0.7
0.8
0.9
1
–4
I
D
= –1 mA
I
D
= –10 mA
150
–1
–5
–10
–20
–50
–100
T
A
= 150 C
75 C
25 C
–25 C
120
80
40
50
20
5
2
0.5
0.2
C
iss
C
oss
C
rss
–20
–10
–5
–2
–1
V
GS
= 0
f = 1 MHz
t
d(on)
t
d(off)
–200
–500
–50
–20
–10
–5
5
200
100
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