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參數(shù)資料
| 型號： | UPA505T |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS |
| 中文描述： | N-CHANNEL/P-CHANNEL場效應(yīng)晶體管5針2電路 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 88K |
| 代理商： | UPA505T |
6
μ
PA505T
P-ch part
d
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
T
C
- Case Temperature - C
20
40
80
100
140 160
P
T
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free air
300
250
200
150
100
50
0
T
A
- Ambient Temperature - C
25
50
75
100
125
150
350
Peroneunt
TOTAL
60
120
DRAIN CURRENT vs. DRAIN TO
SOURCE VOLTAGE
–120
–100
–80
–60
–40
–20
0
–2
–4
–6
–8
–10
–12
–14
V
DS
- Drain to Source Voltage - V
I
D
–10 V
–6 V
V
GS
= –4 V
Pulsed
measurement
TRANSFER CHARACTERISTICS
–100
–10
–1
–0.1
0
–5
–15
V
GS
- Gate to Source Voltage - V
I
D
–0.001
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
–2.4
–30
0
30
60
90
120
150
T
ch
- Channel Temperature - C
V
G
V
DS
= –5.0 V
I
D
= –1 A
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
100
10
–5
–100
I
D
- Drain Current - mA
|
f
|
1
–8 V
–2.2
–2.0
–1.8
–1.6
–1.4
–1.2
–0.01
–10
T
A
= 150 C
75 C
25 C
–25 C
V
= –5.0 V
Pulsed
measurement
T
A
= –25 C
25 C
75 C
150 C
–1
–50
–20
–10
–2
20
50
5
2
V
DS
= –5.0 V
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