參數(shù)資料
型號: UPA505T
廠商: NEC Corp.
英文描述: N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS
中文描述: N-CHANNEL/P-CHANNEL場效應晶體管5針2電路
文件頁數(shù): 5/9頁
文件大?。?/td> 88K
代理商: UPA505T
5
μ
PA505T
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1000
500
100
50
10
50
500
1000
I
D
- Drain Current - mA
R
D
10
100
V
GS
= 10 V
Pulsed
measurement
T
A
= 75 C
25 C
–25 C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
100
50
10
5
1
5
50
100
V
GS
- Gate to Source Voltage - V
R
D
1
10
I
D
= 10 mA
Pulsed
measurement
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
30
20
10
–30
0
30
60
90
120
150
T
ch
- Channel Temperature - C
R
D
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
10
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
C
i
,
o
,
r
0.1
V
= 10 V
Pulsed
measurement
0
SWITCHING CHARACTERISTICS
100
50
20
10
20
50
100
I
D
- Drain Current - mA
t
d
,
r
,
d
,
f
10
t
d(off)
t
f
t
r
t
d(on)
V
DD
= 5 V
V
GS
= 5 V
R
G
= 10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.6
V
SD
- Source to Drain Voltage - V
I
S
0.1
0.5
0.4
0.7
0.8
0.9
1
V
GS
= 0
f = 1 MHz
C
iss
C
oss
C
rss
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