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參數(shù)資料
| 型號： | UPA2781GR |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE |
| 中文描述： | 開關N溝道功率MOSFET /肖特基二極管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 63K |
| 代理商： | UPA2781GR |
Data Sheet G16420EJ1V0DS
3
μ
PA2781GR
TYPICAL CHARACTERISTICS (T
A
= 25°C. All terminals are connected.)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
0
40
20
60
100
140
80
120
160
100
80
60
40
20
T
A
- Ambient Temperature -
°
C
P
T
0
0.4
0.8
1.2
1.6
2
2.4
2.8
0
20
40
60
80
100
120
140
160
MOSFET
SCHOTTKY
Mouted on ceramic substrate of
1200 mm
2
x 2.2 mm
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
I
D
0.01
0.1
1
10
100
0.01
0.1
1
10
100
I
D(pulse)
10 ms
Power Dissipation Limited
I
D(DC)
PW = 100
μ
s
1 ms
DC
R
DS(on)
Limited
(at V
GS
= 10 V)
100 ms
Single pulse
Mounted on ceramic substrate
of 1200 mm
2
x 2.2 mm
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (MOSFET)
r
t
°
C
0.1
1
10
100
1000
Single pulse
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
R
th(ch-A)
= 62.5°C/W
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
相關PDF資料 |
PDF描述 |
|---|---|
| UPA502T | N-CHANNEL MOS FET 5-PIN 2 CIRCUITS |
| UPA503T | P-CHANNEL MOSFET (5-PIN 2 CIRCUITS) |
| UPA507TE | P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING |
| UPA573T | P-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING |
| UPA602T | N-CHANNEL MOS FET 6-PIN 2 CIRCUITS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UPA2781GR-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2781GR-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2782 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UPA2782GR Data Sheet | Data Sheet[04/2003] |
| UPA2782GR | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE |
| UPA2790GR | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N- AND P-CHANNEL POWER MOS FET |
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