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參數(shù)資料
| 型號： | UPA2781GR |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE |
| 中文描述： | 開關N溝道功率MOSFET /肖特基二極管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 63K |
| 代理商： | UPA2781GR |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA2781GR
SWITCHING
N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
DATA SHEET
Document No. G16420EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
2002
DESCRIPTION
The
μ
PA2781GR is N-channel Power MOSFET, which built a
Schottky Barrier Diode inside.
This product is designed for synchronous DC/DC converter
application.
FEATURES
Built a Schottky Barrier Diode
Low on-state resistance
R
DS(on)1
= 7.6 m
TYP. (V
GS
= 10 V, I
D
= 7 A)
R
DS(on)2
= 11.3 m
TYP. (V
GS
= 4.5 V, I
D
= 7 A)
R
DS(on)3
= 12.9 m
TYP. (V
GS
= 4.0 V, I
D
= 7 A)
Low C
iss
: C
iss
= 900 pF TYP.
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2781GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C. All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
[
MOSFET
]
Drain Current (pulse)
Note1
Average Forward Current
Note2
[
SCHOTTKY
]
Total Power Dissipation
Note3
[
MOSFET
]
Total Power Dissipation
Note3
[
SCHOTTKY
]
Channel & Junction Temperature
Storage Temperature
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Rectangle wave, 50% Duty Cycle
3.
Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
I
F(AV)
P
T
P
T
T
ch
, T
j
T
stg
30
±20
±13
±52
2.5
2
1
150
V
V
A
A
A
W
W
°C
°C
55 to + 150
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
8
5
1, 2, 3
4
5, 6, 7, 8: Drain
: Source
EQUIVALENT CIRCUIT
Source
Schottky
Diode
Gate
Protection
Diode
Gate
Drain
相關PDF資料 |
PDF描述 |
|---|---|
| UPA502T | N-CHANNEL MOS FET 5-PIN 2 CIRCUITS |
| UPA503T | P-CHANNEL MOSFET (5-PIN 2 CIRCUITS) |
| UPA507TE | P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING |
| UPA573T | P-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING |
| UPA602T | N-CHANNEL MOS FET 6-PIN 2 CIRCUITS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UPA2781GR-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2781GR-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2782 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UPA2782GR Data Sheet | Data Sheet[04/2003] |
| UPA2782GR | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE |
| UPA2790GR | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N- AND P-CHANNEL POWER MOS FET |
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