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參數(shù)資料
| 型號： | UPA2781GR |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE |
| 中文描述： | 開關N溝道功率MOSFET /肖特基二極管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 63K |
| 代理商： | UPA2781GR |
Data Sheet G16420EJ1V0DS
2
μ
PA2781GR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted. All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
Note
I
DSS
V
DS
= 24 V, V
GS
= 0 V
50
μ
A
V
DS
= 24 V, V
GS
= 0 V, T
A
= 125°C
10
mA
Gate Leakage Current
I
GSS
V
GS
= ±20 V, V
DS
= 0 V
±
10
μ
A
Gate Cut-off Voltage
Drain to Source On-state Resistance
Note
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
2.5
V
R
DS(on)1
V
GS
= 10 V, I
D
= 7 A
7.6
9.5
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 7 A
11.3
15.1
m
R
DS(on)3
V
GS
= 4.0 V, I
D
= 7 A
12.9
17.2
m
Input Capacitance
C
iss
V
DS
= 10 V
900
pF
Output Capacitance
C
oss
V
GS
= 0 V
450
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
120
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15 V, I
D
= 7 A
9
ns
Rise Time
t
r
V
GS
= 10 V
5
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
35
ns
Fall Time
t
f
8
ns
Total Gate Charge
Q
G
V
DD
= 15 V
9
nC
Gate to Source Charge
Q
GS
V
GS
= 5 V
3
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Q
GD
I
D
= 13 A
4
nC
V
F(S-D)
I
F
= 1 A, V
GS
= 0 V
0.45
0.5
V
I
F
= 1 A, V
GS
= 0 V, T
A
= 125°C
0.37
V
Reverse Recovery Time
t
rr
I
F
= 7 A, V
GS
= 0 V
28
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
18
nC
Note
Pulsed: PW
≤
350
μ
s, Duty Cycle
≤
2%
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UPA2781GR-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2781GR-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2782 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UPA2782GR Data Sheet | Data Sheet[04/2003] |
| UPA2782GR | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE |
| UPA2790GR | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N- AND P-CHANNEL POWER MOS FET |
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