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參數資料
| 型號： | UPA2757GR-E2-AT |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場效應晶體管的開關N溝道功率場效應晶體管 |
| 文件頁數： | 7/8頁 |
| 文件大小： | 178K |
| 代理商： | UPA2757GR-E2-AT |
Data Sheet G18206EJ2V0DS
7
μ
PA2757GR
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
E2 TYPE
E1 TYPE
Reel side
Draw-out side
MARKING INFORMATION
A2757
Pb-free plating marking
Lot code
1 pin mark
RECOMMENDED SOLDERING CONDITIONS
The
μ
PA2757GR should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Recommended
Condition Symbol
Infrared reflow
Maximum temperature (Package's surface temperature): 260
°
C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220
°
C: 60 seconds or less
Preheating time at 160 to 180
°
C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
IR60-00-3
Partial heating
Maximum temperature (Pin temperature): 350
°
C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P350
Caution Do not use different soldering methods together (except for partial heating).
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相關代理商/技術參數 |
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| UPA2761UGR | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2761UGR-E1-AT | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2761UGR-E2-AT | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2762UGR | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2762UGR-E1-AT | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
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