- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376421 > UPA2757GR-E2-AT (NEC Corp.) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET PDF資料下載
參數(shù)資料
| 型號： | UPA2757GR-E2-AT |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場效應(yīng)晶體管的開關(guān)N溝道功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 178K |
| 代理商： | UPA2757GR-E2-AT |
Data Sheet G18206EJ2V0DS
4
μ
PA2757GR
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0
20
40
60
80
100
120
0
20
40
60
80
100 120 140 160
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
T
0
0.5
1
1.5
2
2.5
0
20
40
60
80
100 120 140 160
Mounted on ceramic
substrate of
2000 mm
2
x 1.6 mmt
2 units
1 unit
T
A
- Ambient Temperature -
°
C
D
0.01
0.1
1
10
100
0.01
0.1
1
10
100
I
D(pulse)
I
D(DC)
Mounted on ceramic substrate of
2000 mm
2
x 1.6 mmt, 1 unit
T
A
= 25
°
C
Single pulse
R
DSon
Lm0V)
(V
GS
=1
PW=200
μ
s
1
0m
m
i
s
i
s
1
00m
i
s
DC
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
t
°
C
0.1
1
10
100
1000
T
A
= 25
°
C
Single pulse
R
th(ch-A)
= 73.5
°
C/W
i
Mounted on ceramic substrate of 2000 mm
2
x 1.6 mmt, 1 unit
PW - Pulse Width – s
100
μ
1 m 10 m 100 m 1 10 100 1000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA2790GR | SWITCHING N- AND P-CHANNEL POWER MOS FET |
| UPA2791GR | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |
| UPA2791GR-E1-AT | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |
| UPA2791GR-E2-AT | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET |
| UPA505T | N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA2761UGR | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2761UGR-E1-AT | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2761UGR-E2-AT | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2762UGR | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2762UGR-E1-AT | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。