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參數(shù)資料
| 型號(hào)： | UPA2757GR-E2-AT |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場(chǎng)效應(yīng)晶體管的開(kāi)關(guān)N溝道功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 178K |
| 代理商： | UPA2757GR-E2-AT |
Data Sheet G18206EJ2V0DS
5
μ
PA2757GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
D
0
5
10
15
20
25
0
0.5
1
1.5
V
GS
= 10 V
4.5 V
Pulsed
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
D
0.0001
0.001
0.01
0.1
1
10
100
0
1
2
3
4
V
DS
= 10 V
Pulsed
T
A
= 150
°
C
75
°
C
25
°
C
25
°
C
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
G
0
0.5
1
1.5
2
2.5
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
°
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
f
0.001
0.01
0.1
1
10
V
DS
= 10 V
Pulsed
T
A
= 150
°
C
25
°
C
25°C
75
°
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
D
Ω
0
20
40
60
80
100
1
10
100
V
GS
= 4.5 V
10 V
Pulsed
I
D
- Drain Current - A
D
Ω
0
20
40
60
80
100
0
5
10
15
20
I
D
= 3.0 A
Pulsed
V
GS
- Gate to Source Voltage - V
100
μ
1 m 10 m 100 m
1 10
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