參數(shù)資料
型號: UPA2650T1E
廠商: NEC Corp.
英文描述: MOS FIELD EFFECT TRANSISTOR
中文描述: MOS場效應(yīng)管
文件頁數(shù): 5/9頁
文件大?。?/td> 208K
代理商: UPA2650T1E
Data Sheet G18749EJ1V0DS
5
μ
PA2650T1E
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
D
0
5
10
15
0
0.5
1
V
GS
= 10 V
Pulsed
4.5 V
2.5 V
V
DS
- Drain to Source Voltage - V
I
D
0.01
0.1
1
10
100
0
0.5
1
1.5
2
2.5
3
V
DS
= 10 V
Pulsed
T
A
=
25
°
C
25
°
C
75
°
C
125
°
C
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
G
0
0.5
1
1.5
-50
-25
0
25
50
75
100 125 150
V
DS
= V
GS
I
D
= 0.25 mA
T
ch
- Channel Temperature -
°
C
f
0.1
1
10
0.01
0.1
1
10
V
DS
= 10 V
Pulsed
T
A
=
25
°
C
25
°
C
75
°
C
125
°
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
D
Ω
0
20
40
60
80
100
0.01
0.1
1
10
100
MOSFET1
Pulsed
10 V
4.5 V
I
D
- Drain Current - A
D
Ω
0
20
40
60
80
100
0.01
0.1
1
10
100
MOSFET2
Pulsed
10 V
4.5 V
I
D
- Drain Current - A
相關(guān)PDF資料
PDF描述
UPA2680T1E MOSFET WITH SCHOTTKY BARRIER DIODE
UPA2716GR SWITCHING P-CHANNEL POWER MOSFET
UPA2717GR SWITCHING P-CHANNEL POWER MOSFET
UPA2718GR SWITCHING P-CHANNEL POWER MOSFET
UPA2719GR SWITCHING P-CHANNEL POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA2650T1EE2 制造商:NEC 功能描述:New
UPA2660T1R 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 m
UPA2660T1R-E2-AX 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET 2N-CH 20V 4A 6SON
UPA2670T1R 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:DUAL P-CHANNEL MOSFET -20 V, -3.0 A, 79 m
UPA2670T1R-E2-AX 制造商:Renesas Electronics Corporation 功能描述:MOSFET 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET P-CH -20V -3A 6HUSON