參數(shù)資料
型號(hào): UMT1N
廠商: Rohm CO.,LTD.
英文描述: General Purpose Transistor (Isolated Dual Transistors)
中文描述: 通用晶體管(隔離雙晶體管)
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 80K
代理商: UMT1N
EMT1 / UMT1N / IMT1A
Transistors
C
C
(
COLLECTOR CURRENT : I
C
(mA)
Rev.A
3/3
-0.1
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
-1
-0.5
-0.2
-0.05
Fig.7 Collector-emitter saturation
voltage vs. collector current (
ΙΙ
)
l
C
/l
B
= 10
Ta = 100
°
C
25
°
C
-40
°
C
50
100
0.5
20
50
100
200
500
1000
1
2
5
10
EMITTER CURRENT : I
E
(mA)
T
T
(
Fig.8 Gain bandwidth product vs.
emitter current
Ta = 25
°
C
V
CE
= -
12V
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Collector output capacitance vs.
collector-base voltage
C
p
E
p
Emitter input capacitance vs.
emitter-base voltage
Fig.9
-0.5
-20
2
5
10
-1
-2
-5
-10
20
Cib
Cob
Ta = 25
°
C
f
=
I
E
= 0A
I
C
= 0A
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