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參數(shù)資料
| 型號： | UMT1N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General Purpose Transistor (Isolated Dual Transistors) |
| 中文描述： | 通用晶體管（隔離雙晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 80K |
| 代理商： | UMT1N |
EMT1 / UMT1N / IMT1A
Transistors
General Purpose Transistor
(Isolated Dual Transistors)
EMT1 / UMT1N / IMT1A
z
Features
1) Two 2SA1037AK chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent,
eliminating interference.
z
Structure
Epitaxial planar type
PNP silicon transistor
z
Equivalent circuit
Rev.A
1/3
EMT1 / UMT1N
(3)
IMT1A
Tr
2
Tr
1
(2)
(1)
(4)
(5)
(6)
Tr
2
Tr
1
(4)
(5)
(6)
(3)
(2)
(1)
The following characteristics apply to both
Tr
1
and Tr
2
.
z
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
P
C
EMT1, UMT1N
IMT1A
Limits
60
50
6
150
150
55 to +150
150 (TOTAL)
300 (TOTAL)
Unit
V
V
V
mA
mW
1
°
C
°
C
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
z
External dimensions
(Unit : mm)
ROHM : EMT6
EMT1
ROHM : UMT6
UMT1N
ROHM : SMT6
IMT1A
Abbreviated symbol : T1
Abbreviated symbol : T1
Abbreviated symbol : T1
0
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0
0
0
0
1
1
Each lead has same dimensions
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
Each lead has same dimensions
(
(
(
0.3to0.6
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
Each lead has same dimensions
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| UMT1N_08 | 制造商:ROHM 制造商全稱:Rohm 功能描述:General Purpose Transistor |
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| UMT1NTN | 功能描述:兩極晶體管 - BJT DUAL PNP 50V 150MA SOT-363 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| UMT1N-TP | 功能描述:兩極晶體管 - BJT -50V -150mA 150mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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