參數(shù)資料
型號(hào)： UMT1N
廠商： Rohm CO.,LTD.
英文描述： General Purpose Transistor (Isolated Dual Transistors)
中文描述： 通用晶體管（隔離雙晶體管）
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 80K
代理商： UMT1N
EMT1 / UMT1N / IMT1A
Transistors
z
Electrical characteristics
(Ta = 25
°
C)
Rev.A
2/3
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
6
120
140
4
0.1
0.1
560
0.5
5
V
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
60V
V
EB
=
6V
V
CE
=
6V, I
C
=
1mA
V
CE
=
12V, I
E
= 2mA, f = 100MHz
I
C
/I
B
=
50mA/
5mA
V
CB
=
12V, I
E
= 0A, f = 1MHz
V
V
μ
A
μ
A
V
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
z
Packaging specifications
Package
Taping
Code
UMT1N
EMT1
Type
IMT1A
TR
3000
T2R
8000
T108
3000
Basic ordering unit (pieces)
z
Electrical characteristic curves
-0.2
C
(
-50
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
V
CE
=
6V
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
Ta = 100
°
C
25
°
C
40
°
C
-0.4
-4
-8
-1.2
0
-2
-6
-10
-0.8
-1.6
-2.0
-3.5
μ
A
-7.0
-10.5
-14.0
-17.5
-21.0
-24.5
-28.0
-31.5
I
B
= 0
Ta = 25
°
C
-35.0
C
C
(
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics (
Ι
)
-40
-80
-5
-3
-4
-2
-1
-20
-60
-100
0
I
B
= 0
Ta = 25
°
C
C
C
(
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.3 Grounded emitter output
characteristics (
ΙΙ
)
-50
μ
A
-100
-150
-200
-250
-500
-300
500
200
100
50
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
D
F
Ta = 25
°
C
V
CE
= -5V
-3V
-1V
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current (
Ι
)
500
200
100
50
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
D
F
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs. collector
current (
ΙΙ
)
V
CE
= -6V
Ta = 100
°
C
-40
°
C
25
°
C
-0.1
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
-1
-0.5
-0.2
-0.05
Ta = 25
°
C
C
C
(
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (
Ι
)
I
C
/I
B
= 50
20
10
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UMT1N-TP 功能描述:兩極晶體管 - BJT -50V -150mA 150mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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