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參數(shù)資料
| 型號： | UML4N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose transistor |
| 中文描述： | 通用晶體管 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | UML4N |
UML4N
Transistors
Tr2
Rev.A
3/3
0
1
100
1000
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
C
C
(
1.4
1.0
1.2
0.4
0.6
0.8
0.2
V
CE
=2V
Pulsed
T2
°
C
T
°
C
T
4
°
C
Fig.3 Grounded emitter propagation
characteristics
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
1
D
F
10
1000
100
Ta
=
125
°
C
Ta
=
40
°
C
Ta
=
25
°
C
V
CE
=
2V
Pulsed
Fig.4
DC current gain vs.
collector current
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
1
C
C
(
10
1000
100
Ta=25
°
C
Pulsed
I
C
/I
B
=
50
I
C
/I
B
=
20
I
C
/I
B
=
10
Fig.5
Collector-emitter saturation voltage
vs. collector current (
Ι
)
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
1
C
C
(
10
1000
100
Ta
=
25
°
C
Ta
=
40
°
C
Ta
=
125
°
C
I
C
/I
B
=
20
Pulsed
Fig.6
Collector-emitter saturation voltage
vs. collector current (
ΙΙ
)
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
10
B
B
100
10000
1000
Ta
=
25
°
C
Ta
=
40
°
C
Ta
=
125
°
C
I
C
/I
B
=
20
Pulsed
Fig.7
Base-emitter saturation voltage
vs. collector current
1
10
100
1000
EMITTER CURRENT : I
E
(mA)
1
T
T
(
10
1000
100
V
CE
=
2V
Ta
=
25
°
C
Pulsed
Fig.8
Gain bandwidth product
vs. emitter current
1
10
100
0.1
10
100
1000
Ta
=
25
°
C
f
=
1MHz
I
E
=
0A
C
E
EMITTER TO BASE VOLTAGE : V
EB
(
V)
Cib
Cob
Fig.9
Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
0.01
0.1
1
10
100
EMITTER CURRENT : V
CE
(V)
0.001
T
C
(
0.01
10
0.1
1
Ta
=
25
°
C
Single Pulsed
DC
100ms
10ms1ms
Fig.10
Safe operation area
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