參數(shù)資料
型號(hào): UMR12N
廠商: Rohm CO.,LTD.
英文描述: Switching diode Silicon epitaxial planar
中文描述: 開(kāi)關(guān)二極管,硅外延平面
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 199K
代理商: UMR12N
DA221
Switching diode
Diodes
Rev.A
1/3
DA221
z
Applications
Ultra high speed switching
z
Features
1) Ultra small mold type. (EMD3)
2) High reliability.
z
Construction
Silicon epitaxial planar
z
Absolute maximum ratings
(Ta=25
°
C)
Parameter
age (repetitive peak)
Reverse volt
Reverse volt
Pow
Junct
St
Rart
z
Electrical characteristics
(Ta=25
°
C)
z
External dimensions
(Unit : mm)
z
Land size figure
(Unit : mm)
z
Structure
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
(3)
1.6±0.2
1
1.0±0.1
0
0.5
0.5
(2)
(1)
0.15±0.05
0.7±0.1
0.55±0.1
0
0~0.1
0.2±0.1
  -0.05
0.3±0.1
    0.05
(1)D2:C (2)D1:A
(3)D1:C D2:A
EMD3
1.0
0
0.5
0.5
0.7
0
0.6
0.6
1
z
Taping specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.1
      0
3
1
8
φ0.5±0.1
1
0.3±0.1
1.8±0.1
5
0.9±0.2
0
Symbol
V
RM
V
R
I
FM
Io
I
surge
Pd
Tj
Tstg
Unit
V
V
mA
mA
mA
mW
M
Hz
100
t=1us
300
150
ion temperature
orage temperature
ed in slash put frequency
150
-55 to +150
Limits
20
20
200
100
age (DC)
ified forward current (Single)
Surge current
ard current (Single)
Average rect
er dissipation
Forw
Symbol
V
F
I
R
Ct
Min.
-
-
-
Typ.
-
-
-
Max.
1.0
0.1
4.0
Unit
V
μA
pF
I
F
=10mA
V
R
=15V
V
R
=6V , f=1MHz
Conditions
Reverse current
acitance between terminals
Cap
Parameter
ard voltage
Forw
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