
2000 Feb 17
14
Philips Semiconductors
Objective specification
Low power GSM/DCS/PCS multi-band transceiver
UAA3535HL
P
INS
 IA, IB, QA
 AND
 QB (RX
 MODE
)
G
v(min)
minimum voltage conversion
gain
maximum voltage conversion
gain
voltage conversion gain step
gain mismatch I and Q paths
quadrature-phase error
I and Q paths
gain control linearity
gain set to minimum;
notes 1 and 5
gain set to maximum;
notes 1 and 5
note 5
note 5
peak error
19
25
31
dB
G
v(max)
89
93
97
dB
G
v(step)
G
v(I/Q)
Φ
4
0.5
5
dB
dB
deg
LE
AGC
over full gain range; note 2
 
2
over any 20 dB gain range
 
0.5
3% T.H.D.; R
L
= 100 k
per pin
+2
+0.5
dB
dB
V
V
o(peak)
maximum output voltage per
pin
maximum output current per
pin
output offset voltage
3 dB high-pass corner
frequency
3 dB IF filter bandwidth
group delay variation
IF filter attenuation
(fifth-order)
0.75
I
o(peak)
25
50
μ
A
V
offset
HP
3dB
under static conditions
300
4
6
+300
8
mV
kHz
B
IF(
3dB)
t
d(g)
α
5(IF)
100 kHz centre frequency
30 kHz < f
o
< 170 kHz
f
o
= 100 kHz
 ±
 200 kHz
f
o
= 100 kHz
 ±
 400 kHz
f
o
= 100 kHz
 ±
 600 kHz
220
17
54
73
1.5
31
64
82
250
2
kHz
μ
s
dB
dB
dB
Transmit IF section (initial conditions: V
mod(peak)
= 0.5 V; f
mod
= 67.7 kHz; unless otherwise specified)
P
INS
 IA, IB, QA
 AND
 QB (TX
 MODE
)
f
mod
modulation frequency
3 dB low-pass cut-off
frequency
single-ended; peak value
single-ended
1
MHz
V
mod(peak)
R
i(D)
IF LO oscillator (measured and guaranteed on demonstration board at T
amb
= 25
 °
C)
modulation level
dynamic input resistance
0.5
25
0.55
V
k
f
IFLO
K
VCO
range of possible operation
VCO gain
with programming
V
tune
 from 0.6 V to
V
CC
 0.6 V
referenced to V
CC(IFCP)
pushing
78
30
91
MHz
MHz/V
V
tune
f
VCC
tuning voltage
frequency variation with
respect to the supply voltage
frequency variation
0.4
V
CC
 0.4
1
V
MHz/V
f
TRON
Transmit modulation loop section
pulling
5
+5
kHz
O
FFSET MIXER
;
 PIN
 TXRFI
f
RF
RF input frequency
880
1910
MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT