
2000 Feb 17
13
Philips Semiconductors
Objective specification
Low power GSM/DCS/PCS multi-band transceiver
UAA3535HL
AC CHARACTERISTICS
V
CC
= V
CC(CP)
= 2.6 V; T
amb
=
30 to +70
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
RF receiver section; measured in a 50
impedance system, including external input baluns and matching
networks to 50
P
INS
: GSMIA
AND
GSMIB
f
i(RF)
R
i(dif)
C
i(dif)
F
RF input frequency
differential input resistance
differential input capacitance
noise figure
925
75
1.5
3.5
960
4
MHz
pF
dB
parallel RC input model
parallel RC input model
for R
i
; maximum AGC;
notes 1 and 2
bit LNA = 0; note 1
α
off
P
off
DES3
i
LNA off-state attenuation
LNA off-state power handling bit LNA = 0; notes 1 and 3
input referred 3 dB
desensitization
3
25
45
dB
dBm
dBm
f = 3 MHz; T
amb
= 25
°
C;
note 1
P
INS
: DCSPCSIA
AND
DCSPCSIB
f
i(RF)
R
i(dif)
C
i(dif)
F
RF input frequency
differential input resistance
differential input capacitance
noise figure
1805
120
1.0
4
1990
4.5
MHz
pF
dB
parallel RC input model
parallel RC input model
for R
i
; maximum AGC;
notes 1 and 2
bit LNA = 0; note 1
α
off
P
off
DES3
i
LNA off-state attenuation
LNA off-state power handling bit LNA = 0; notes 1 and 3
input referred 3 dB
desensitization
6
28
45
dB
dBm
dBm
f = 3 MHz; T
amb
= 25
°
C;
note 1
P
INS
: GSMIA, GSMIB, DCSPCSIA
AND
DCSPCSIB
s
11
SPUR
P(RFin)
input reflection coefficient
power level of spurious
signals at RF input
note 2
900 to 1000 MHz band
1800 to 2000 MHz band
out of preceding bands
25
15
10
57
47
45
dB
dBm
dBm
dBm
dBm
CP1
1 dB input compression point minimum AGC;
T
amb
= 25
°
C; note 1
maximum AGC;
T
amb
= 25
°
C; note 1
maximum AGC; note 4
IP3
i
input referred third-order
intercept
input referred second-order
intercept
input referred 3 dB
desensitization
image rejection
18
dBm
IP2
i
30
dBm
DES3
i
f = 3 MHz; T
amb
= 25
°
C;
note 1
f
IF
= 200 kHz;
T
amb
= 25
°
C; note 1
note 5
23
dBm
IR
35
38
dB
G
v(RF)
gain mismatch GSM and
DCS paths
2
dB