參數(shù)資料
型號: U423
廠商: Vishay Intertechnology,Inc.
英文描述: Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V,柵極工作電流-0.25pA的單片雙N溝道結(jié)型場效應(yīng)管)
中文描述: 單片雙N溝道場效應(yīng)(最小柵源擊穿電壓- 40V的,柵極工作電流,0.25pA的單片雙?溝道結(jié)型場效應(yīng)管)
文件頁數(shù): 3/5頁
文件大?。?/td> 72K
代理商: U423
U421/423
Siliconix
P-37514—Rev. B, 25-Jul-94
3
Typical Characteristics
0
30
20
10
40
50
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
Output Characteristics
Output Characteristics
V
GS(off)
– Gate-Source Cutoff Voltage (V)
V
DG
– Drain-Gate Voltage (V)
V
DS
– Drain-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
I
D
g
f
I
G
I
D
I
D
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
g
fs
I
DSS
I
GSS
@ 25 C
T
A
= 125 C
T
A
= 25 C
I
D
= 100 A
V
GS
= 0 V
–0.2 V
–0.4 V
–0.6 V
V
GS
= 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–0.1 V
–0.3 V
–0.5 V
–0.7 V
100 A
1
0.8
0
0.6
0.4
0.2
2
0
1.6
1.2
0.8
0.4
0
–5
–1
–2
–3
–4
0.5
0
0.4
0.3
0.2
0.1
0
20
4
8
12
16
1
0
0.8
0.6
0.4
0.2
0
20
4
8
12
16
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
100 nA
I
GSS
V
GS(off)
= –1 V
V
GS(off)
= –1.5 V
Output Characteristics
V
DS
– Drain-Source Voltage (V)
I
D
0.5
0
1
0.8
0.6
0.4
0.2
0.4
0.3
0.2
0
0.1
V
GS(off)
= –1.5 V
V
GS
= 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
Output Characteristics
V
DS
– Drain-Source Voltage (V)
I
D
0.25
0
1
0.8
0.6
0.4
0.2
0.2
0.15
0.1
0
0.5
V
GS(off)
= –1 V
V
GS
= 0 V
–0.1 V
–0.2 V
–0.3 V
–0.4 V
–0.5 V
–0.6 V
30 A
–0.7 V
–1.0 V
30 A
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PDF描述
U430 Matched N-Channel Pairs
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參數(shù)描述
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