參數(shù)資料
型號(hào): U421
廠商: Vishay Intertechnology,Inc.
英文描述: Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V,柵極工作電流-0.25pA的單片雙N溝道結(jié)型場(chǎng)效應(yīng)管)
中文描述: 單片雙N溝道場(chǎng)效應(yīng)(最小柵源擊穿電壓- 40V的,柵極工作電流,0.25pA的單片雙?溝道結(jié)型場(chǎng)效應(yīng)管)
文件頁數(shù): 4/5頁
文件大?。?/td> 72K
代理商: U421
U421/423
4
Siliconix
P-37514—Rev. B, 25-Jul-94
Typical Characteristics (Cont’d)
100
1000
10
10
100
1000
130
120
80
110
100
90
10
100
1000
100
10
1
10
100
1000
100
10
1
Transfer Characteristics
Gate-Source Differential Voltage
vs. Drain Current
Voltage Differential with Temperature
vs. Drain Current
Common Mode Rejection Ratio
vs. Drain Current
(
V
G
V
G
C
A
V
V
GS
– Gate-Source Voltage (V)
I
D
– Drain Current ( A)
I
D
– Drain Current ( A)
I
D
– Drain Current ( A)
I
D
– Drain Current ( A)
T
A
= –55 C
125 C
V
GS(off)
= –1 V
U421
V
DG
= 10 V
T
A
= 25 to 125 C
T
A
= –55 to 25 C
V
DG
= 10 V
T
A
= 25 C
5 – 10 V
A
V
g
fs
R
L
R
L
g
os
1
R
L
10 V
I
D
Assume V
DD
= 15 V, V
DS
= 5 V
–1.5 V
I
D
Circuit Voltage Gain vs. Drain Current
0.5
0
0.4
0.3
0.2
0.1
0
–1
–0.2
–0.4
–0.6
–0.8
100
0
80
60
40
20
U423
U421
U423
On-Resistance vs. Drain Current
I
D
– Drain Current (mA)
0.01
0.1
1
5
4
3
2
1
0
V
GS(off)
= –1 V
–1.5 V
V
GS(off)
= –1 V
V
DS
= 10 V
25 C
V
GS1
V
GS2
V
DG
CMRR = 20 log
V
DG
= 10 – 20 V
r
D
)
V
(
)
t
V
G
V
G
相關(guān)PDF資料
PDF描述
U423 Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V,柵極工作電流-0.25pA的單片雙N溝道結(jié)型場(chǎng)效應(yīng)管)
U430 Matched N-Channel Pairs
U431 Matched N-Channel Pairs
U430 Matched N-Channel JFET Pairs(最小柵源擊穿電壓-25V,柵極工作電流-15pA的N溝道結(jié)型場(chǎng)效應(yīng)管)
U431 Matched N-Channel JFET Pairs(最小柵源擊穿電壓-25V,柵極工作電流-15pA的N溝道結(jié)型場(chǎng)效應(yīng)管)
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U422 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel Dual JFET