參數(shù)資料
型號(hào)： U421
廠商： Vishay Intertechnology,Inc.
英文描述： Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V，柵極工作電流-0.25pA的單片雙N溝道結(jié)型場效應(yīng)管)
中文描述： 單片雙N溝道場效應(yīng)（最小柵源擊穿電壓- 40V的，柵極工作電流，0.25pA的單片雙?溝道結(jié)型場效應(yīng)管）
文件頁數(shù)： 2/5頁
文件大?。?/td> 72K
代理商： U421
U421/423
2
Siliconix
P-37514—Rev. B, 25-Jul-94
Specifications
a
Limits
U421
U423
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1 A, V
DS
= 0 V
–60
–40
–40
Gate-Gate
Breakdown Voltage
V
(BR)G1 – G2
I
G
=
1 A, I
D
= 0, I
S
= 0
55
40
40
V
Gate-Source
Cutoff Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 nA
–1.2
–0.4
–2
–0.4
–2
Saturation Drain Current
I
DSS
V
DS
= 10 V, V
GS
= 0 V
400
60
1000
60
1000
A
Gate Reverse Current
I
GSS
V
GS
= –20 V, V
DS
= 0 V
–0.6
–1
–1
pA
T
A
= 125 C
–0.3
–1
–1
nA
Gate Operating Current
I
G
V
DG
= 10 V, I
D
= 5 mA
–0.2
–0.25
–0.25
pA
T
A
= 125 C
–150
–250
–250
Drain-Source
On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 10 A
2000
Gate-Source Voltage
V
GS
V
DG
= 10 V, I
D
= 5 mA
–0.8
–1.8
–1.8
Gate-Source
Forward Voltage
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source Forward
Transconductance
g
fs
DS
= 10 V V
GS
= 0 V f = 1 kHz
V
= 10 V, V
= 0 V, f = 1 kHz
0.6
0.3
1.5
0.3
1.5
mS
Common-Source
Output Conductance
g
os
4
10
10
S
Common-Source Forward
Transconductance
g
fs
= 10 V I
= 10 mA f = 1 kHz
V
DS
= 10 V, I
D
= 10 mA , f = 1 kHz
0.2
0.12
0.35
0.12
0.35
mS
Common-Source
Output Conductance
g
os
0.4
3
3
S
Common-Source
Input Capacitance
C
iss
1.4
3
3
Common-Source
Reverse Transfer
Capacitance
C
rss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
0.7
1.5
1.5
pF
Equivalent Input
Noise Voltage
e
n
V
DS
= 10 V, I
D
= 10 mA , f = 10 Hz
30
70
70
nV
√
Hz
Noise Figure
NF
R
G
= 10 M
1
1
dB
Matching
Differential
Gate-Source Voltage
V
GS1
– V
GS2
V
DG
= 10 V, I
D
= 10 mA
10
25
mV
Gate-Source Voltage
Differential Change
with Temperature
V
GS1
– V
GS2
T
V
DG
= 10 V, I
D
= 10 mA
T
A
= –55 to 125 C
10
40
V/ C
Common Mode
Rejection Ratio
CMRR
V
DG
= 10 to 20 V, I
D
= 10 mA
102
90
80
dB
Notes
a.
b.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed or subject to production testing.
NNT
相關(guān)PDF資料
PDF描述
U423 Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V，柵極工作電流-0.25pA的單片雙N溝道結(jié)型場效應(yīng)管)
U430 Matched N-Channel Pairs
U431 Matched N-Channel Pairs
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U431 Matched N-Channel JFET Pairs(最小柵源擊穿電壓-25V，柵極工作電流-15pA的N溝道結(jié)型場效應(yīng)管)
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U421_SOIC 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a high input impedance Monolithic Dual N-Channel JFET
U421_TO-71 制造商:MICROSS 制造商全稱:MICROSS 功能描述:high input impedance Monolithic Dual N-Channel JFET
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U421-E3 功能描述:JFET Dual Matched RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
U422 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel Dual JFET
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