參數(shù)資料
型號(hào)： TWR-MCF51JE
廠(chǎng)商： Freescale Semiconductor
文件頁(yè)數(shù)： 35/47頁(yè)
文件大?。?/td> 0K
描述： TOWER SYSTEM BOARD MCF51JE
標(biāo)準(zhǔn)包裝： 1
系列： ColdFire®, Flexis™
類(lèi)型： MCU
適用于相關(guān)產(chǎn)品： Freescale 電源塔系統(tǒng)，MCF51JE
所含物品： 板
MCF51JE256 Datasheet, Rev. 4
Preliminary Electrical Characteristics
Freescale Semiconductor
40
3.14
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory chapter in the Reference
Manual for this device (MCF51JE256RM).
3.15
USB Electricals
The USB electricals for the USB On-the-Go module conform to the standards documented by the
Universal Serial Bus Implementers Forum. For the most up-to-date standards, visit http://www.usb.org.
If the Freescale USB On-the-Go implementation has electrical characteristics that deviate from the
standard or require additional information, this space would be used to communicate that information.
Table 23. Flash Characteristics
#
Characteristic
Symbol
Minimum
Typical
Maximum
Unit
C
1
Supply voltage for program/erase
-40
C to 105CV
prog/erase
1.8
—
3.6
V
D
2
Supply voltage for read operation
VRead
1.8
—
3.6
V
D
3
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
D
4
Internal FCLK period (1/FCLK)
tFcyc
5—
6.67
sD
5
Byte program time (random location)2
tprog
9tFcyc
P
6
Byte program time (burst mode)2
tBurst
4tFcyc
P
7
Page erase time2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for calculating
approximate time to program and erase.
tPage
4000
tFcyc
P
8
Mass erase time2
tMass
20,000
tFcyc
P
9
Program/erase endurance3
TL to TH = –40C to + 105C
T = 25
C
3
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how Freescale defines
typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
10,000
—
100,000
—
cycles
C
10
Data retention4
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25
C using
the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin EB618,
Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
C
Table 24. Internal USB 3.3 V Voltage Regulator Characteristics
#
Characteristic
Symbol
Minimum
Typical
Maximu
m
Unit
C
1
Regulator operating voltage
Vregin
3.9
—
5.5
V
C
2VREG output
Vregout
3
3.3
3.75
V
P
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TWR-MCF51-JE-KIT 制造商:Freescale Semiconductor 功能描述:KIT DEV TOWER MCF51JE 制造商:Freescale Semiconductor 功能描述:TOWER SYS KIT, MCF51JE, TWR-SER/ELEV
TWR-MCF51JE-KIT 功能描述:開(kāi)發(fā)板和工具包 - COLDFIRE KIT MCU Bd Fsl Tower RoHS:否 制造商:Freescale Semiconductor 產(chǎn)品:Development Kits 工具用于評(píng)估:MCF53017 核心:ColdFire V3 接口類(lèi)型:Ethernet, UART, USB 工作電源電壓:12 V
TWR-MCF51JF 功能描述:開(kāi)發(fā)板和工具包 - COLDFIRE MCF51QM Tower Module RoHS:否 制造商:Freescale Semiconductor 產(chǎn)品:Development Kits 工具用于評(píng)估:MCF53017 核心:ColdFire V3 接口類(lèi)型:Ethernet, UART, USB 工作電源電壓:12 V
TWR-MCF51JF-KIT 功能描述:開(kāi)發(fā)板和工具包 - COLDFIRE MCF51JF Tower Kit RoHS:否 制造商:Freescale Semiconductor 產(chǎn)品:Development Kits 工具用于評(píng)估:MCF53017 核心:ColdFire V3 接口類(lèi)型:Ethernet, UART, USB 工作電源電壓:12 V
TWR-MCF51JG 制造商:Freescale Semiconductor 功能描述:TWR-MCF51JG - Boxed Product (Development Kits) 制造商:Freescale Semiconductor 功能描述:MOD TOWER SYSTEM MCF51JX
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