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參數(shù)資料
| 型號(hào)： | TS83102G0BMGS |
| 廠商： | ATMEL CORP |
| 元件分類： | ADC |
| 英文描述： | 1-CH 10-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, CBGA152 |
| 封裝： | HERMATIC, CI-CGA-152 |
| 文件頁數(shù)： | 28/52頁 |
| 文件大?。?/td> | 1548K |
| 代理商： | TS83102G0BMGS |
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34
5360A–BDC–06/05
TS83102G0BMGS
9.
TS83102G0BMGS Operating Features
9.1
Timing Information
9.1.1
Timing Value for TS83102G0BMGS
The timing values are defined in the ”Electrical Operating Characteristics” on page 4.
The timing values are given at the package inputs/outputs, taking into account the package’s
transmission line, bond wire, pad and ESD protections capacitance, as well as specified termi-
nation loads. The evaluation board propagation delays in 50
controlled impedance traces are
not taken into account. You should apply proper derating values corresponding to termination
topology.
9.1.2
Propagation Time Considerations
The TOD and TDR timing values are given from the package pin to pin and do not include the
additional propagation times between the device pins and input/output termination loads. For the
evaluation board, the propagation time delay is 6.1 ps/mm (155 ps/inch) corresponding to a 3.4
dielectric constant (at 10 GHz) of the RO4003 used for the board.
If a different dielectric layer is used (for instance Teflon), you should use appropriate propaga-
tion time values.
TD1 and TD2 do not depend on propagation times because they are differential data (see ”Defi-
TD1 and TD2 are also the most straightforward data to measure, because they are differential:
TD can be measured directly on the termination loads, with matching oscilloscope probes.
9.1.3
TOD-TDR Variation Over Temperature
Values for TOD and TDR track each other over the temperature (there is a 1% variation for TOD
and TDR per 100
°C temperature variation). Therefore the TOD and TDR variation over temper-
ature is negligible. Moreover, the internal (on-chip) skews between each TOD and TDR data
effect can be considered negligible. Consequently, the minimum values for TOD and TDR are
never more than 100 ps apart. The same is true for their maximum values.
TR
Rise Time
Time delay for the output data signals to rise from 20% to 80% of delta between the low level
and high level
TRDR
Data Ready Reset
Delay
Delay between the falling edge of the Data Ready output asynchronous Reset signal
(DDRB) and the reset to digital zero transition of the Data Ready output signal (DR)
TS
Settling Time
Time delay to achieve 0.2% accuracy at the converter output when an 80% full-scale step
function is applied to the differential analog input
VSWR
Voltage Standing
Wave
Where S11 is the reflection coefficient of the scattering
matrix. The VSWR over frequency measures the degree of
mismatching between the packaged ADC input impedance (ideally 50
or so) and the
transmission line’s impedance. The packaged ADC input impedance (transmission line and
termination) is controlled so as to ensure VSWR < 1.2 :1 from DC up to 2.5 GHz. A VSWR of
1.2 :1 corresponds to a 0.039 dB insertion loss (20 dB return loss) - i.e. 99% power
transmitted and 1% reflected
Table 8-1.
Definitions of Terms (Continued)
VSWR
1
S11
+
()
1
S11
–
()
÷
=
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TS83102G0BVGL | 制造商:e2v technologies 功能描述:ADC SGL 2GSPS 10-BIT PARALLEL 152CBGA - Trays |
| TS83102G0CGL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog to Digital Converter |
| TS83102G0GSZR5 | 制造商:e2v technologies 功能描述:TS83102G0GSZR5 - Trays |
| TS831-3I | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE LOW |
| TS831-3ID | 功能描述:監(jiān)控電路 2.71V Micropower AL RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
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