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參數(shù)資料
| 型號： | TPS3610U18PWR |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | BATTERY-BACKUP SUPERVISORS FOR RAM RETENTION |
| 中文描述： | 電池備份的RAM保持監(jiān)事 |
| 文件頁數(shù)： | 15/22頁 |
| 文件大小： | 453K |
| 代理商： | TPS3610U18PWR |
SLVS327B
–
DECEMBER 2000
–
REVISED DECEMBER 2002
15
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 6
500
600
700
800
900
1000
50
75
100
125
150
175
200
TA = 85
°
C
TA = 25
°
C
TA = 0
°
C
TA =
–
40
°
C
–
–
rD
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
(V
DD
to V
OUT
)
vs
OUTPUT CURRENT
VDD = 3.3 V
VBAT = GND
MSWITCH = GND
IO
–
Output Current
–
mA
Figure 7
5
7.5
10
12.5
15
17.5
20
2.5
4.5
6.5
8.5
10.5
12.5
14.5
TA = 85
°
C
TA = 25
°
C
TA = 0
°
C
TA =
–
40
°
C
–
–
rD
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
(V
BAT
to V
OUT
)
vs
OUTPUT CURRENT
IO
–
Output Current
–
mA
VBAT = 3.3 V
MSWITCH = GND
Figure 8
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
TA = 85
°
C
TA = 25
°
C
TA = 0
°
C
TA =
–
40
°
C
ICEOUT = 5 mA
VDD = 5 V
MSWITCH = GND
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
(CEIN to CEOUT)
vs
INPUT VOLTAGE AT CEIN
VI(CEIN)
–
Input Voltage at CEIN
–
V
–
rD
(
–
0
5
10
15
20
25
30
0
1
2
3
4
5
6
TA =
–
40
°
C
TA = 25
°
C
TA = 85
°
C
TA = 0
°
C
–
–
I
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
A
μ
VDD
–
Supply Voltage
–
V
Figure 9
VBAT Mode
VBAT = 2.6 V
MSWITCH = GND
VDD Mode
VBAT = GND
MSWITCH = GND
or
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPS3610U18PWRG4 | 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| TPS3610U25PWR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| TPS3610U30PWR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| TPS3610U33PWR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| TPS3610U50 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:BATTERY-BACKUP SUPERVISORS FOR RAM RETENTION |
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