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參數(shù)資料
| 型號： | TPS2345 |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | CompactPCI Hot Swap Power Manager Industrial Temp IC that meets the PICMG Standard |
| 中文描述： | CompactPCI熱插拔電源管理集成電路工業(yè)溫度在PICMG符合標準 |
| 文件頁數(shù)： | 5/20頁 |
| 文件大?。?/td> | 411K |
| 代理商： | TPS2345 |
TPS2330, TPS2331
SINGLE HOT SWAP POWER CONTROLLER WITH
CIRCUIT BREAKER AND POWER-GOOD REPORTING
SLVS277A – MARCH 2000– REVISED APRIL 2000
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating temperature range (–40
°
C < T
A
< 85
°
C),
3 V
≤
V
I(IN)
≤
13 V (unless otherwise noted)
general
PARAMETER
TEST CONDITIONS
VI(ENABLE) = 5 V (TPS2331),
VI(ENABLE) = 0 V (TPS2330)
VI(ENABLE) = 0 V (TPS2331),
VI(ENABLE) = 5 V (TPS2330)
MIN
TYP
0.5
MAX
UNIT
mA
II(IN)
Input current IN
Input current, IN
1
75
200
II(stby)
Standby current (sum of currents into IN ISENSE and ISET)
5
μ
A
GATE
PARAMETER
TEST CONDITIONS
MIN
TYP
11.5
MAX
UNIT
VG(GATE_3V)
VG(GATE_4.5V)
VG(GATE_10.8V)
II(GATE) = 500 nA,
DISCH open
DISCH o en
VI(IN) = 3 V
VI(IN) = 4.5 V
VI(IN) = 10.8 V
9
Gate voltage
10.5
14.5
V
16.8
21
VC(GATE)
Clamping voltage, GATE to
DISCH
9
10
12
V
IS(GATE)
Source current, GATE
3 V
≤
VI(IN)
≤
13.2 V, 3 V
≤
VO(VREG)
≤
5.5 V,
VI(GATE) = VI(IN) + 6 V
3 V
≤
VI(IN)
≤
13.2 V, 3 V
≤
VO(VREG)
≤
5.5 V,
VI(GATE) = VI(IN)
10
14
20
μ
A
Sink current, GATE
50
75
100
μ
A
VI(IN) = 3 V
VI(IN) = 4.5 V
VI(IN) = 10.8 V
VI(IN) = 3 V
VI(IN) = 4.5 V
VI(IN) = 10.8 V
0.5
tr(GATE)
Rise time, GATE
Cg to GND = 1 nF (see Note 2)
0.6
ms
1
0.1
tf(GATE)
Fall time, GATE
Cg to GND = 1 nF (see Note 2)
0.12
0.2
ms
NOTE 2: Specified, but not production tested.
TIMER
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VOT(TIMER)
Threshold voltage, TIMER
0.4
0.5
0.6
V
μ
A
mA
Charge current, TIMER
VI(TIMER) = 0 V
VI(TIMER) = 1 V
35
50
65
Discharge current, TIMER
1
2.5
circuit breaker
PARAMETER
TEST CONDITIONS
RISET = 1 k
MIN
TYP
MAX
UNIT
VIT(CB)
IIB(ISENSE)
Undervoltage voltage, circuit breaker
40
50
60
mV
μ
A
Input bias current, ISENSE
0.1
5
Discharge current GATE
Discharge current, GATE
VO(GATE) = 4 V
VO(GATE) = 1 V
Cg = 50 pF,
(50% to 10%)
400
25
800
150
mA
tpd(CB)
Propagation (delay) time, comparator inputs to
gate output
10 mV overdrive,
CO(timer) = 50 pF
1.3
μ
s
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