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參數(shù)資料
| 型號： | TPIC2701MJ |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY |
| 中文描述： | 7通道共源功率DMOS陣列 |
| 文件頁數(shù)： | 5/15頁 |
| 文件大?。?/td> | 245K |
| 代理商： | TPIC2701MJ |
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
resistive-load switching characteristics over operating case temperature range (unless otherwise
noted) (see Note 4)
PARAMETER
TEST CONDITIONS
TPIC2701M
MIN
UNIT
TYP
10
MAX
td(on)
td(off)
tr
tf
Qg
Qgs
Qgd
NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal
effects must be taken into account separately.
Turn-on delay time
Turn-off delay time
VDD = 25 V,
tdis = 10 ns,
RL = 100
See Figure 2
ten = 10 ns,
30
ns
Rise time
,
15
Fall time
5
Total gate charge
VDS = 48 V,
See Figure 3
ID = 0.25 A,
0 25 A
VGS = 10 V,
2.8
Gate-to-source charge
1.6
nC
Gate-to-drain charge
1.2
thermal resistance
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R
θ
JA
Junction-to-ambient thermal resistance
N package with all outputs at equal power
90
°
C/W
J package with all outputs at equal power
66
PARAMETER MEASUREMENT INFORMATION
trr
0.5 A
IF/IS
0
IRM
di/dt = 25 A/
μ
s
25% of IRM
QRR = Shaded Area
(see Note A)
NOTE A: IRM = maximum recovery current
Figure 1. Reverse-Recovery-Current Waveforms of Source-Drain and Clamp Diodes
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