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參數(shù)資料
| 型號： | TPIC2701MJ |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY |
| 中文描述： | 7通道共源功率DMOS陣列 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大小： | 245K |
| 代理商： | TPIC2701MJ |
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over case temperature operating range (unless otherwise noted)
(see Note 4)
PARAMETER
TEST CONDITIONS
TPIC2701M
MIN
UNIT
TC
TYP
MAX
V(BR)DS
Drain to source breakdown voltage
Drain-to-source breakdown voltage
ID = 1
μ
A,
ID = 1 mA,
ID = 1 mA,
VGS = 0
VGS = 0
VDS = VGS
25
°
C
Full range
60
V
VTGS
Gate-to-source input threshold voltage
Full range
25
°
C
Full range
25
°
C
Full range
25
°
C
Full range
25
°
C
Full range
25
°
C
Full range
25
°
C
1.2
1.75
2.4
V
VDS(on)
Drain to source on state voltage
Drain-to-source on-state voltage
ID= 0 5 A
ID = 0.5 A,
VGS= 15 V
VGS = 15 V
0.25
0.45
V
0.65
IDSS
Zero gate voltage drain current
Zero-gate-voltage drain current
VDS= 48 V
VDS = 48 V,
VGS= 0
VGS = 0
0.05
1
μ
A
10
IGSSF
Forward gate current, drain short-circuited to
source
VGS= 20 V
VGS = 20 V,
VDS= 0
VDS = 0
10
100
nA
μ
A
nA
μ
A
10
IGSSR
Reverse gate current, drain short-circuited to
source
VGS=
VGS = –20 V, VDS = 0
20 V VDS= 0
10
100
10
rDS(on)
Forward drain source on state resistance
Forward drain-source on-state resistance
VGS= 15 V
VGS = 15 V,
ID= 0 5 A
ID = 0.5 A
0.5
0.9
1.3
gfs
Ciss
Coss
Forward transconductance
VDS = 15 V,
ID = 0.5 A
0.8
S
Short-circuit input capacitance, common source
105
Short-circuit output capacitance, common source
Short-circuit reverse transfer capacitance,
common source
Full range is –55
°
C to 125
°
C.
NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal
effects must be taken into account separately.
VDS = 25 V,
f = 300 kHz
VGS = 0,
Full range
65
pF
Crss
15
source-drain diode characteristics, T
C
= 25
°
C
PARAMETER
TEST CONDITIONS
TPIC2701
TYP
UNIT
MIN
MAX
VSD
trr(SD)
QRR
Forward On voltage
IS = 0.5 A,
IS = 0.5 A,
di/dt = 25 A/
μ
s,
VGS = 0
VGS = 0,
0.9
1.4
V
Reverse-recovery time
Total source-drain diode charge
VDS = 48 V,
See Figure 1
165
250
ns
nC
source-to-drain diode characteristics over operating case temperature range (unless otherwise
noted) (see Note 4)
PARAMETER
TEST CONDITIONS
TPIC2701M
UNIT
MIN
TYP
MAX
VSD
trr
QRR
NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal
effects must be taken into account separately.
Forward On voltage
IS = 0.5 A,
IS = 0.5 A,
di/dt = 25 A/
μ
s,
VGS = 0
VGS = 0,
TC = 25
°
C,
0.9
1.4
V
Reverse recovery time
Total source-to-drain diode charge
VDS = 48 V,
See Figure 1
165
250
ns
nC
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