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| 型號(hào)： | TPIC2701MJ |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY |
| 中文描述： | 7通道共源功率DMOS陣列 |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 245K |
| 代理商： | TPIC2701MJ |
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-source voltage, V
DS
Gate-source voltage, V
GS
Clamp-drain voltage, V
CD
Continuous source-drain diode current
Pulsed drain current, each output, I
D
(see Note 1 and Figure 17)
Pulsed clamp current, I
CL
(see Note 1 and Figure 18)
Continuous drain current, each output, all outputs on
Single-pulse avalanche energy, E
AS
(see Figure 4)
Continuous total power dissipation
Operating virtual junction temperature range, T
J
:TPIC2701
60 V
±
20 V
60 V
0.5 A
3 A
3 A
0.5 A
22 mJ
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TPIC2701M
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TPIC2701M
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Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: N Package
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: J Package
NOTE 1: Pulse duration = 10 ms, duty cycle = 6%.
See Dissipation Rating Table
–40
°
C to 150
°
C
–55
°
C to 150
°
C
–40
°
C to 125
°
C
–55
°
C to 125
°
C
–65
°
C to 150
°
C
. . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . .
Operating case temperature range, T
C:
TPIC2701
Storage temperature range, T
stg
260
°
C
300
°
C
DISSIPATION RATING TABLE
PACKAGE
TA
≤
25
°
C
POWER RATING
DERATING FACTOR
ABOVE TA = 25
°
C
21.3 mW/
°
C
11.0 mW/
°
C
TA = 70
°
C
POWER RATING
TA = 85
°
C
POWER RATING
TA = 125
°
C
POWER RATING
J
2660 mW
1701 mW
1382 mW
530 mW
N
1400 mW
905 mW
740 mW
300 mW
electrical characteristics, T
C
= 25
°
C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TPIC2701
TYP
UNIT
MIN
MAX
V(BR)DS
VTGS
Drain-source breakdown voltage
ID = 1
μ
A,
ID = 1 mA,
ID = 0.5 A,
See Notes 2 and 3
VGS = 0
VDS = VGS
VGS = 15 V,
60
V
Gate-source threshold voltage
1.2
1.75
2.4
V
VDS(on)
Drain-source on-state voltage
0.25
0.4
V
IDSS
Zero gate voltage drain current
Zero-gate-voltage drain current
VDS= 48 V
VDS = 48 V,
VGS= 0
VGS = 0
TC = 25
°
C
TC = 125
°
C
0.05
1
μ
A
0.5
10
IGSSF
Forward gate current, drain short circuited to
source
VGS = 20 V,
VDS = 0
10
100
nA
IGSSR
Reverse gate current, drain short circuited to
source
VGS = –20 V, VDS = 0
10
100
nA
rDS(on)
Forward drain source on state resistance
Forward drain-source on-state resistance
VGS = 15 V,
See Notes 2 and 3 and
Figures 5 and 6
ID = 0.5 A,
TC = 25
°
C
0.5
0.8
TC = 125
°
C
0.8
1.3
gfs
Forward transconductance
VDS = 15 V,
See Notes 2 and 3
ID = 0.5 A,
0.5
0.8
S
Ciss
Coss
Short-circuit input capacitance, common source
105
Short-circuit output capacitance, common source
Short-circuit reverse transfer capacitance,
common source
VDS= 25 V
VDS = 25 V,
VGS= 0
VGS = 0,
f = 300 kHz
65
pF
Crss
15
NOTES:
2. Technique should limit TJ – TC to 10
°
C maximum.
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts with a single output
transistor conducting.
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