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參數(shù)資料
| 型號(hào)： | TPIC1502DWR |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 20V V(BR)DSS | 1.5A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|陣| N溝道| 20V的五（巴西）直| 1.5AI（四）|蘇 |
| 文件頁(yè)數(shù)： | 8/16頁(yè) |
| 文件大?。?/td> | 330K |
| 代理商： | TPIC1502DWR |
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TPIC1502
QUAD AND HEX POWER DMOS ARRAY
SLIS054 – OCTOBER 1996
8
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
10 V
VOLTAGE WAVEFORM
Qgd
Time
Gate Voltage
VGS
12-V
Battery
0.2
μ
F
50 k
0.3
μ
F
Current
Regulator
DUT
Same Type
as DUT
0
IG = 100
μ
A
IG Current-
Sampling Resistor
ID Current-
Sampling Resistor
VDD = 14 V
TEST CIRCUIT
Qgs(th)
VDS
Qg
Figure 4. Gate-Charge Test Circuit and Voltage Waveform
TYPICAL CHARACTERISTICS
Figure 5
1.5
1
0.5
0
– 40 – 20
2
2.5
GATE-TO-SOURCE THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
VG
TJ – Junction Temperature –
°
C
0
20
40
60
80
100 120 140 160
VDS = VGS
Q1A, Q1B, Q2A, Q2B
ID = 10 mA
ID = 1 mA
ID = 100
μ
A
Figure 6
1.5
1
0.5
0
– 40 – 20
2
2.5
GATE-TO-SOURCE THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
VG
TJ – Junction Temperature –
°
C
0
20
40
60
80
100 120 140 160
VDS = VGS
Q3A, Q3B, Q4A, Q4B, Q5A, Q5B
ID = 1 mA
ID = 100
μ
A
ID = 10 mA
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