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參數(shù)資料
| 型號： | TPIC1502DWR |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 20V V(BR)DSS | 1.5A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|陣| N溝道| 20V的五（巴西）直| 1.5AI（四）|蘇 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 330K |
| 代理商： | TPIC1502DWR |
TPIC1502
QUAD AND HEX POWER DMOS ARRAY
SLIS054 – OCTOBER 1996
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
source-to-drain diode characteristics, Q3A, Q4A, Q5A, T
C
= 25
°
C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
trr
Reverse-recovery time
IS = 750 mA,
VDS = 14 V,
See Figures 2 and 23
VGS = 0,
di/dt = 100 A/
s,
μ
26
ns
QRR
Total diode charge
17
nC
resistive-load switching characteristics, Q3A, Q3B, Q4A, Q4B, Q5A, Q5B, T
C
= 25
°
C
PARAMETER
TEST CONDITIONS
MIN
TYP
13
MAX
UNIT
td(on)
td(off)
tr
tf
Qg
Qgs(th)
Qgd
LD
LS
Rg
Turn-on delay time
Turn-off delay time
VDD = 14 V,
tdis = 10 ns,
RL = 18.7
See Figure 3
ten = 10 ns,
13
ns
Rise time
,
3
Fall time
7
Total gate charge
VDS = 14 V,
See Figure 4 and Figure 22
ID = 750 mA,
VGS = 10 V,
1
1.3
Threshold gate-to-source charge
0.2
0.25
nC
Gate-to-drain charge
0.2
0.25
Internal drain inductance
7
nH
Internal source inductance
7
Internal gate resistance
0.25
thermal resistance
PARAMETER
TEST CONDITIONS
See Notes 5 and 8
MIN
TYP
90
MAX
UNIT
R
θ
JA
R
θ
JB
R
θ
JP
NOTES:
Junction-to-ambient thermal resistance
Junction-to-board thermal resistance
Junction-to-pin thermal resistance
See Notes 6 and 8
See Notes 7 and 8
52
28
°
C/W
5. Package mounted on a FR4 printed-circuit board with no heatsink.
6. Package mounted on a 24 in2, 4-layer FR4 printed-circuit board.
7. Package mounted in intimate contact with infinite heatsink.
8. All outputs with equal power
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